FCP125N65S3R0

$4.04

Description：MOSFET N-CH 650V 24A TO220-3
Series：SuperFET® III
Mfr：onsemi
Package：Tube

SKU:1145156e11b6 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 650V 24A TO220-3
Series：SuperFET® III
Mfr：onsemi
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：24A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：125mOhm @ 12A, 10V
Vgs(th) (Max) @ Id：4.5V @ 2.4mA
Gate Charge (Qg) (Max) @ Vgs：46 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：1940 pF @ 400 V
FET Feature：-
Power Dissipation (Max)：181W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220-3
Package / Case：TO-220-3

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FCP125N65S3R0

Overview

The onsemi FCP125N65S3R0 is an N-channel enhancement-mode MOSFET belonging to the SUPERFET III series. It features a 650V drain-source voltage rating and a continuous drain current of 24A at 25°C, reducing to 15A at 100°C. The device exhibits a maximum on-resistance of 125mΩ and a typical gate charge of 46nC. Packaged in a TO-220 through-hole housing with three pins, it supports a maximum power dissipation of 181W. Operating temperatures range from -55°C to +150°C, with a pulse drain current capability of 60A.

Feature Summary

Utilizes SuperFET III charge balance technology for low conduction and switching losses.
Capable of withstanding high dv/dt rates to support robust circuit performance.
Undergoes 100% avalanche testing to ensure reliability under transient conditions.
Designed for easy driving to assist in mitigating electromagnetic interference.

Applications

Telecommunications and server power supplies
Industrial power systems
Uninterruptible power supply (UPS) units
Solar energy conversion systems

Procurement Notes

Verify the specific suffix R0 against official datasheets to confirm package and tape/reel specifications. Confirm RoHS compliance status directly with manufacturer documentation prior to integration. Ensure thermal management designs account for the specified power dissipation limits within the operating temperature range.

Selection Notes

Select this component for applications requiring high-voltage handling with efficient switching characteristics. The low gate charge facilitates driver compatibility, while the rugged avalanche rating provides protection against inductive load transients. Evaluate thermal resistance requirements based on the TO-220 package constraints for the intended duty cycle.

Part Context

This part belongs to the FCP series of high-voltage superjunction MOSFETs manufactured by onsemi. The SUPERFET III family employs advanced charge balance architecture to optimize the trade-off between on-resistance and gate charge. This specific model targets general-purpose high-power switching environments requiring reliable performance.

Replacement Considerations

FCP165N65S3R0 offers similar voltage ratings with higher on-resistance. FCPF250N65S3L-F154 is a related variant but carries a 'Not Recommended for New Designs' status. Verify pinout compatibility and thermal characteristics when substituting with other SuperFET III devices.