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Product Detailed Parameters
- Description：MOSFET N-CH 600V 28A TO220-3
- Series：SuperFET® II
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：28A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：130mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：70 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3590 pF @ 380 V
- FET Feature：-
- Power Dissipation (Max)：278W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
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Overview
The FCP130N60 is a single N-channel SuperFET II MOSFET manufactured by onsemi. It features a 600V drain-source breakdown voltage and a continuous drain current of 28A at case temperature. The device exhibits a maximum on-resistance of 130 milliohms at 10V gate drive. It operates within a junction temperature range of -55°C to +150°C and supports a power dissipation of 278W. The component utilizes TO-247-3 through-hole packaging.
Feature Summary
- Integrates SuperFET II technology for optimized switching performance
- Provides high-voltage capability with 600V breakdown rating
- Features low on-resistance for efficient conduction
- Supports robust thermal operation up to 150°C
Applications
- High-frequency power supplies
- Uninterruptible power systems
- DC-to-AC converters
Procurement Notes
Verify the specific manufacturer designation, as Fairchild Semiconductor was acquired by onsemi. Confirm that the ordering suffix matches the exact electrical parameters required for your design. Ensure compliance with RoHS directives if applicable to your region. Check for any specific handling instructions related to the TO-247-3 package during assembly.
Selection Notes
Select this component when a 600V rating and approximately 130 milliohm on-resistance are required in a TO-247-3 package. Consider the 28A continuous current limit and 278W power dissipation capabilities relative to your thermal management strategy. Evaluate the SuperFET II architecture benefits for high-frequency applications compared to standard MOSFETs.
Part Context
This part belongs to the SuperFET II family from onsemi, formerly Fairchild Semiconductor. The series focuses on combining low on-resistance with fast switching characteristics. It is designed for high-efficiency power conversion applications requiring reliable high-voltage performance in a standard through-hole footprint.
Replacement Considerations
Direct substitutes include FCP190N60, FCP380N60, FCH130N60, and FCH170N60. Verify pinout compatibility and ensure the replacement meets or exceeds the 600V voltage and 130 milliohm resistance requirements.
