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Product Detailed Parameters
- Description：MOSFET N-CH 600V 16A TO220-3
- Series：SuperFET™
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：260mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：70 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：2250 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：167W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
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Overview
The onsemi FCP16N60 is a single N-channel SuperFET MOSFET utilizing charge-balanced superjunction technology. It features a 600V drain-source voltage rating and a continuous drain current of 16A at 25°C case temperature. The device offers a maximum on-resistance of 260mΩ and a gate charge of 55nC. It operates within a junction temperature range of -55°C to +150°C, with a power dissipation capacity of 167W. The component is housed in a TO-220-3 through-hole package.
Feature Summary
- Charge-balanced superjunction technology for low conduction losses
- Optimized switching performance with high dv/dt capability
- Enhanced avalanche energy handling capabilities
Applications
- Power Factor Correction (PFC) circuits
- Server and telecommunications power supplies
- Flat Panel Display (FPD) television power sources
- ATX computer power supplies
- Industrial power applications
Procurement Notes
Verify the specific datasheet revision and ordering suffix when sourcing. Confirm thermal management requirements align with the specified junction-to-case thermal resistance. Ensure compatibility with standard TO-220-3 mounting hardware. Check for RoHS compliance documentation relevant to the manufacturing batch.
Selection Notes
Select this component for designs requiring robust superjunction performance in medium-power switching applications. Consider the 260mΩ on-resistance for efficiency targets. Evaluate the 16A current rating against peak load demands. Verify that the TO-220-3 package fits the available PCB real estate and thermal constraints.
Part Context
This part belongs to the first-generation SuperFET family from onsemi. It represents an evolution in silicon MOSFET design, focusing on balancing low on-resistance with fast switching speeds. The series is engineered to reduce overall system loss in high-voltage power conversion architectures.
Replacement Considerations
The FCPF16N60 is a documented variant within the same product family. Verify pinout and thermal characteristics before substitution. No other direct cross-references are confirmed in public documentation.
