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Product Detailed Parameters
- Description：MOSFET N-CH 800V 23A TO220-3
- Series：SuperFET® II
- Mfr：onsemi
- Package：Tube,Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：800 V
- Current - Continuous Drain (Id) @ 25°C：23A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：220mOhm @ 11.5A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 2.3mA
- Gate Charge (Qg) (Max) @ Vgs：105 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4560 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：278W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
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Overview
The onsemi FCP220N80 is an N-channel enhancement-mode MOSFET from the SuperFET II series. It features a maximum drain-source voltage (Vds) of 800 V and a continuous drain current (Id) of 14 A at case temperature, with a peak pulsed current of 23 A. The device has a maximum on-resistance (Rds(on)) of 0.4 Ω and typical gate charge of 43 nC. It operates within a temperature range of -55°C to 150°C, dissipating up to 35.7 W in a TO-220F package.
Feature Summary
- Utilizes SuperFET II super-junction technology for optimized performance
- Enhanced avalanche ruggedness for improved reliability
- Low gate charge characteristics for efficient switching
Applications
- High-voltage power supply circuits
- Industrial motor control systems
- Uninterruptible power supplies (UPS)
Procurement Notes
Verify the specific suffix (e.g., G) against the manufacturer's official datasheet to ensure correct packaging and compliance status. Confirm that the TO-220F package variant matches the thermal requirements of the target application design.
Selection Notes
Select this component for applications requiring high blocking voltage and moderate current handling. Evaluate the thermal resistance of the TO-220F package against the expected power dissipation. Ensure the gate drive voltage aligns with the specified threshold for optimal Rds(on) performance.
Part Context
This part belongs to onsemi's SuperFET II family, which employs charge balance technology to reduce conduction losses. It is designed as a replacement for older generation high-voltage MOSFETs in hard-switching applications where efficiency and size are critical constraints.
Replacement Considerations
Check pinout compatibility with existing PCB layouts. Verify that substitute devices meet or exceed the 800 V rating and 0.4 Ω Rds(on) specification to maintain circuit performance.
