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Product Detailed Parameters
- Description：MOSFET N-CH 600V 22A TO220-3
- Series：-
- Mfr：onsemi
- Package：Tube,Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：165mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：45 nC @ 10 V
- Vgs (Max)：±45V
- Input Capacitance (Ciss) (Max) @ Vds：1950 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：205W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
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Overview
The onsemi FCP22N60N-F102 is a single N-channel SupreMOS power MOSFET designed for high-voltage applications. It features a 600V drain-source breakdown voltage and supports a continuous drain current of 22A. The device exhibits a maximum on-resistance of 140 mΩ at room temperature, with a gate charge of 45 nC and a threshold voltage of 2V. Packaged in a TO-220-3 through-hole case, it operates within a junction temperature range of -55°C to +150°C and dissipates up to 39W of power.
Feature Summary
- Optimized for high-voltage operation with fast switching capabilities
- Designed to withstand high-current stresses efficiently
- Low gate resistance (Rg) configuration for rapid switching performance
Applications
- High-voltage power supply circuits
- Industrial motor control systems
- General-purpose switching applications requiring robust current handling
Procurement Notes
Verify component status carefully as the datasheet indicates this product is obsolete and no longer in production by Fairchild Semiconductor. Confirm availability through authorized distributors or secondary markets. Ensure that any sourced units match the specific F102 suffix requirements for package dimensions and electrical characteristics. Validate authenticity and storage conditions prior to integration into designs.
Selection Notes
Select this component when a 600V N-channel MOSFET with 22A continuous current capability is required in a TO-220-3 package. Consider the 140 mΩ on-resistance for conduction loss calculations and the 45 nC gate charge for drive circuit design. Note that this part is discontinued; evaluate alternative active components if long-term supply stability is critical for the project lifecycle.
Part Context
This device belongs to the SupreMOS family from onsemi, formerly Fairchild Semiconductor. It utilizes silicon technology and is housed in a standard TO-220-3 through-hole package. The FCP22N60N series is engineered for efficiency in power conversion, offering low on-resistance and fast switching speeds suitable for demanding industrial and consumer electronics environments.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. As the component is marked obsolete, engineers must identify equivalent active parts based on matching voltage, current, and package specifications.
