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Product Detailed Parameters
- Description：MOSFET N-CH 600V 15A TO220-3
- Series：SuperFET® II
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：260mOhm @ 7.5A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：62 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2500 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：156W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
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Overview
The onsemi FCP260N60E is a SuperFET II N-channel enhancement mode MOSFET designed for high-voltage applications. It features a 600V drain-source breakdown voltage and a maximum continuous drain current of 15A. The device exhibits a typical on-resistance of 260mΩ at VGS=10V, with a gate charge of 48nC. Operating within a temperature range of -55°C to +150°C, it utilizes a TO-220FP-3 through-hole package. The component supports a maximum power dissipation of 36W and includes an integrated body diode.
Feature Summary
- SuperFET II technology integrates the MOSFET and body diode for optimized performance
- Enhanced switching speed and reduced gate charge for efficient operation
- Robust avalanche capability for handling inductive load stress
Applications
- High-frequency switch-mode power supplies
- DC-DC converter circuits
- Motor control systems
Procurement Notes
Verify the specific suffix F152 against official datasheets to confirm packaging details. Confirm RoHS compliance status directly with the manufacturer documentation. Ensure the TO-220FP-3 pinout matches your PCB layout requirements before finalizing procurement decisions.
Selection Notes
Select this component when a 600V rating and low on-resistance are required for power conversion efficiency. Consider the thermal management capabilities provided by the TO-220FP-3 package for your specific heat dissipation needs. Evaluate the gate charge specifications against your driver capabilities to ensure optimal switching performance.
Part Context
This part belongs to the SuperFET II family from onsemi, which combines advanced trench gate MOSFET technology with a fast recovery body diode. The series is engineered to minimize switching losses and improve overall system efficiency in power electronics applications requiring high voltage blocking capabilities.
Replacement Considerations
Check for direct replacements within the SuperFET II lineup that offer similar voltage and current ratings. Verify pin compatibility and thermal characteristics when substituting with other TO-220FP-3 packages. Consult official cross-reference guides for confirmed equivalent parts.
