FCP380N60E

Overview

The Fairchild Semiconductor FCP380N60E is an N-channel enhancement mode MOSFET belonging to the SuperFET II series. It features a 600V drain-source voltage rating and a continuous drain current of 10.2A at case temperature. The device exhibits a maximum on-resistance of 380mΩ at 10V gate drive. It utilizes a TO-220-3 through-hole package with a maximum power dissipation of 106W at case temperature.

Feature Summary

• SuperFET II technology utilizing charge balance for low conduction and switching losses
• Enhanced avalanche energy capability for robust operation in inductive loads
• Optimized gate charge characteristics for high-frequency efficiency

Applications

• High-efficiency power supply designs
• Synchronous rectification circuits
• DC-DC converter topologies

Procurement Notes

Verify the manufacturer designation, as Fairchild Semiconductor's discrete semiconductor division operates under the onsemi brand. Confirm the specific suffix 'E' corresponds to the intended packaging or tape-and-reel configuration if required by assembly processes. Cross-reference the datasheet revision date to ensure alignment with current electrical specifications and thermal derating curves.

Selection Notes

Select this component for applications requiring a balance between low on-resistance and manageable gate drive requirements within the 600V voltage class. The TO-220-3 package facilitates efficient heat sinking for moderate power levels. Evaluate the thermal resistance parameters against the system's ambient conditions to ensure the junction temperature remains within safe operating limits during continuous operation.

Part Context

This part belongs to the SuperFET II family, which employs superjunction technology to achieve superior figure-of-merit compared to traditional planar MOSFETs. The series targets high-voltage applications where minimizing switching noise and improving overall system efficiency are critical design objectives.