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Product Detailed Parameters
- Description：POWER FIELD-EFFECT TRANSISTOR, N
- Series：SuperFET® II
- Mfr：Fairchild Semiconductor
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：7.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：600mOhm @ 3.7A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：26 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1120 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：89W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
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Overview
FCP600N60Z is a single N-channel enhancement mode MOSFET from the SuperFET II family, manufactured by Fairchild Semiconductor. It features a TO-220-3 through-hole package with a drain-source breakdown voltage of 600 V and a continuous drain current of 7.4 A at case temperature. The device exhibits a maximum on-resistance of 600 mΩ at 10 V gate drive and a typical gate charge of 26 nC. Power dissipation reaches 89 W at 25°C case temperature, operating within a junction temperature range of -55°C to 150°C.
Feature Summary
- Utilizes advanced charge balance mechanism for low on-resistance and reduced gate charge
- Optimized for high switching performance and superior dv/dt withstand capability
- Designed to minimize conduction loss for efficient AC/DC power conversion
Applications
- AC/DC power conversion in switching mode operation
- System miniaturization applications requiring high efficiency
- General purpose power switching circuits
Procurement Notes
Verify component authenticity against official Fairchild Semiconductor documentation due to potential counterfeit risks. Confirm RoHS compliance status and REACH SVHC declarations prior to integration. Check for recent Product Change Notices regarding packaging or material updates. Ensure storage conditions meet moisture sensitivity level requirements before soldering.
Selection Notes
Select this component for designs requiring robust 600V blocking capability with moderate current handling. The SuperFET II technology offers improved switching characteristics compared to standard MOSFETs. Consider thermal management strategies given the 89W dissipation rating in the TO-220-3 package. Evaluate gate drive requirements against the 26nC charge specification for optimal efficiency.
Part Context
The FCP600N60Z belongs to Fairchild's SuperFET II series, representing a generation of high-voltage MOSFETs utilizing proprietary charge balance mechanisms. This family targets applications demanding lower conduction losses and enhanced switching speeds. The component integrates an internal body diode and is designed for reliable operation in harsh electrical environments common in power electronics.
Replacement Considerations
Direct substitutes include FCPF600N60Z and FCD600N60Z, which share identical electrical specifications but differ in package type (TO-220AB and DPAK respectively). Verify pinout compatibility and thermal resistance values when transitioning between packages.
