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Product Detailed Parameters
- Description：MOSFET N-CH 650V 6A TO220-3
- Series：SuperFET® III
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：600mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 600µA
- Gate Charge (Qg) (Max) @ Vgs：11 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：465 pF @ 400 V
- FET Feature：-
- Power Dissipation (Max)：54W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
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Overview
The FCP600N65S3R0 is a single N-channel enhancement mode power MOSFET from the onsemi SUPERFET III series. It features a 650 V drain-source voltage rating and a continuous drain current of 6 A at 25°C. The device exhibits a maximum on-resistance of 600 mΩ. It utilizes charge balance technology to achieve low gate charge and fast switching characteristics. The component is housed in a TO-220 package for through-hole mounting.
Feature Summary
- SUPERFET III architecture with charge balance technology
- Easy Drive capability for simplified gate control
- High dv/dt rate tolerance
- 100% avalanche tested for reliability
Applications
- Telecommunications and server power supplies
- Industrial power systems
- Uninterruptible Power Supply (UPS) units
- Solar energy conversion systems
Procurement Notes
Verify the specific datasheet revision and ordering suffix when sourcing this component. Confirm that the manufacturer documentation explicitly supports the intended operating conditions. Ensure compliance with RoHS standards and check for any specific handling requirements during procurement.
Selection Notes
Select this part for applications requiring high-voltage isolation with moderate current capacity. The low gate charge facilitates efficient driver design. Evaluate thermal management needs based on the specified power dissipation limits within the target enclosure environment.
Part Context
This component belongs to the SUPERFET III family, which employs advanced superjunction technology. This lineage provides improved efficiency compared to traditional planar MOSFETs. The series is designed to reduce conduction and switching losses in high-frequency power conversion circuits.
Replacement Considerations
Compatible substitutes include FCP125N65S3R0 and FCU600N65S3R0. Verify pinout compatibility and ensure the replacement meets or exceeds the original voltage and current ratings.
