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Product Detailed Parameters
- Description：MOSFET N-CH 800V 10A TO220
- Series：SuperFET® II
- Mfr：onsemi
- Package：Bulk,Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：800 V
- Current - Continuous Drain (Id) @ 25°C：10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：650mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 800µA
- Gate Charge (Qg) (Max) @ Vgs：35 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1565 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：162W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220
- Package / Case：TO-220-3
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Overview
The FCP650N80Z is an N-channel SuperFET II MOSFET manufactured by onsemi. It features a drain-source voltage (Vds) of 800 V and a continuous drain current (Id) of 10 A at case temperature. The device has a maximum on-resistance (Rds(on)) of 650 mΩ at Vgs = 10 V. Key electrical parameters include a gate charge (Qg) of 27 nC, a threshold voltage (Vgs(th)) of 2.5 V, and a power dissipation (Pd) of 30.5 W at 25°C. The component operates within a junction temperature range of -55°C to +150°C and utilizes a TO-220-3 through-hole package.
Feature Summary
- Integrates SuperFET II technology for optimized switching performance and low conduction losses.
- Features enhanced electrostatic discharge (ESD) protection with internal gate-source ESD diode capability exceeding 2 kV HBM.
- Includes 100% avalanche testing to ensure reliability under inductive load switching conditions.
Applications
- AC-DC power supply designs
- LED lighting systems
- Audio equipment amplifiers
- Notebook adapters
- Industrial power applications
Procurement Notes
Verify the specific suffix 'Z' against the manufacturer's latest documentation to confirm compliance status and availability. Confirm that the TO-220-3 package dimensions match your PCB footprint requirements. Check for any recent product change notices regarding pinout or material composition updates before finalizing procurement plans.
Selection Notes
Select this component for high-voltage applications requiring robust avalanche ruggedness and efficient switching. The 800 V rating suits primary-side switcher topologies. Ensure thermal management supports the 30.5 W dissipation limit. Compare gate charge values against driver capabilities to optimize switching frequency and minimize drive losses in the target circuit design.
Part Context
This part belongs to the SuperFET II family from onsemi, formerly Fairchild Semiconductor. The series integrates a trench MOSFET with a fast body diode to improve efficiency. The FCP prefix indicates a through-hole TO-220-3 package variant. This generation focuses on reducing output capacitance and gate charge compared to previous iterations.
Replacement Considerations
Check for direct cross-reference numbers provided in the official datasheet. Verify that any substitute maintains the 800 V rating and comparable Rds(on) and Qg specifications. Ensure the replacement package matches the TO-220-3 form factor for mechanical compatibility.
