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Product Detailed Parameters
- Description：MOSFET N-CHANNEL 600V 9A TO220F
- Series：-
- Mfr：onsemi
- Package：Tube,Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：385mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：29 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：1240 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：83.3W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220F
- Package / Case：TO-220-3 Full Pack
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Overview
The onsemi FCP9N60N-F102 is a single N-channel Power MOSFET from the SupreMOS FAST series, designed for high-voltage switching applications. It features a 600 V drain-source breakdown voltage (Vds) and supports a continuous drain current (Id) of 9 A. The device exhibits a maximum on-resistance (Rds(on)) of 385 mΩ at a gate-source voltage (Vgs) of 10 V. Key electrical parameters include a gate charge (Qg) of 29 nC, a threshold voltage (Vgs(th)) of 2 V, and a maximum gate-source voltage (Vgs) of ±30 V. Thermal performance includes a power dissipation (Pd) of 83.3 W and an operating temperature range from -55 °C to +150 °C junction temperature.
Feature Summary
- SupreMOS technology optimized for fast switching speeds with low gate charge
- High voltage capability suitable for robust power conversion topologies
- Enhanced thermal stability across a wide operating temperature range
Applications
- High-voltage DC-DC converters
- Power factor correction circuits
- Industrial motor control systems
Procurement Notes
Verify component authenticity through authorized distribution channels due to potential counterfeit risks in the power semiconductor market. Confirm that the specific suffix indicates the tube packaging format as documented in official datasheets. Ensure compliance with RoHS and REACH regulations relevant to your region before integration into final assemblies.
Selection Notes
Select this component when system requirements demand a 600 V rating with moderate current handling capabilities around 9 A. The low gate charge facilitates efficient drive circuit design, reducing driver power consumption. Evaluate thermal management solutions carefully, as the TO-220 package requires adequate heatsinking to maintain junction temperatures within safe limits under continuous load conditions.
Part Context
This part belongs to onsemi's SupreMOS family, which integrates advanced trench gate technology for improved efficiency. The FCP9N60N variant specifically targets applications requiring a balance between blocking voltage and conduction losses. It serves as a discrete solution for medium-power industrial and consumer electronics where reliability and switching speed are critical design constraints.
Replacement Considerations
Direct substitutes may include other 600 V N-channel MOSFETs in TO-220 packages with comparable Rds(on) and Qg values. Verify pinout compatibility and thermal resistance characteristics before substitution. Cross-reference with onsemi's internal replacement guides for validated alternatives.
