FCPF11N60

Overview

The FCPF11N60 is an N-channel enhancement-mode MOSFET from the SuperFET series, manufactured by Fairchild Semiconductor (now onsemi). It features a 600V drain-source voltage rating and supports a continuous drain current of 11A at case temperatures of 25°C. The device utilizes charge balance technology to achieve a maximum on-resistance of 380mΩ and a typical gate charge of 40nC. Packaged in a TO-220F for through-hole mounting, it offers a power dissipation capacity of 36W and operates within a temperature range of -55°C to +150°C.

Feature Summary

• SuperFET architecture utilizing charge balance technology for optimized performance
• High avalanche energy capability with 100% avalanche testing verification
• Low effective output capacitance designed to minimize switching losses
• Lead-free construction compliant with RoHS environmental standards

Applications

• Power factor correction circuits
• Server and telecommunications power supplies
• Flat panel television power systems
• ATX computer power supplies
• Industrial power supply units

Procurement Notes

Verify the manufacturer designation as onsemi due to the Fairchild Semiconductor integration. Confirm the specific package variant matches the required thermal and mechanical constraints. Ensure compliance with lead-free and RoHS requirements if applicable to the target assembly process. Cross-reference datasheet revisions to confirm parameter consistency before finalizing component selection.

Selection Notes

Select this component for applications requiring low conduction losses and high reliability in medium-power switching environments. The TO-220F package facilitates efficient heat dissipation for through-hole designs. Evaluate the trade-off between the 380mΩ on-resistance and the 40nC gate charge against specific switching frequency requirements. Ensure adequate thermal management is provided to maintain junction temperatures within the specified operational limits.

Part Context

This device belongs to the SuperFET family, representing the first generation of high-voltage superjunction MOSFETs from Fairchild Semiconductor. The series integrates advanced charge balance techniques to surpass traditional planar MOSFET limitations. This specific model targets general-purpose high-voltage switching applications where efficiency and robustness are critical design parameters.

Replacement Considerations

FCP11N60: Pin-compatible alternative with identical electrical ratings and SuperFET characteristics.