FCPF11N60

FCPF11N60

$2.36
  • Description:MOSFET N-CH 600V 11A TO220F
  • Series:SuperFET™
  • Mfr:onsemi
  • Package:Tube

SKU:5217ba88b3d7 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N-CH 600V 11A TO220F
  • Series:SuperFET™
  • Mfr:onsemi
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):600 V
  • Current - Continuous Drain (Id) @ 25°C:11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:380mOhm @ 5.5A, 10V
  • Vgs(th) (Max) @ Id:5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:52 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:1490 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):36W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220F-3
  • Package / Case:TO-220-3 Full Pack

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FCPF11N60

Overview

The FCPF11N60 is an N-channel power MOSFET from onsemi's SuperFET series, utilizing superjunction technology for high-voltage applications. It features a 600V drain-source voltage and 11A continuous drain current at 25°C. The device has a maximum power dissipation of 36W in a TO-220F package. Key electrical parameters include a typical Rds(on) of 0.32Ω at Vgs=10V, gate charge of 52nC, and input capacitance of 1490pF. It operates within a temperature range of -55°C to +150°C.

Feature Summary

  • Superjunction technology enables low conduction losses and optimized switching performance.
  • High avalanche energy capability ensures reliability under harsh operating conditions.
  • Optimized body diode characteristics reduce reverse recovery effects in hard-switching circuits.

Applications

  • Power Factor Correction (PFC) circuits
  • Server and telecommunications power supplies
  • LCD TV power supplies

Procurement Notes

Verify the specific datasheet revision when sourcing, as historical documentation may reference Fairchild Semiconductor prior to the onsemi acquisition. Confirm that the component matches the standard FCPF11N60 specification rather than variants like the FCPF11N60F or FCPF11N60NT, which possess distinct electrical ratings and packaging configurations. Ensure compliance with RoHS standards required for the target application.

Selection Notes

Select this component for designs requiring robust high-voltage switching with moderate current handling capabilities. The TO-220F package facilitates through-hole mounting for prototyping or industrial equipment. Engineers should evaluate thermal management requirements carefully, as the 36W power dissipation limit is lower than surface-mount equivalents. This part is suitable for cost-sensitive applications where superjunction efficiency benefits are needed without the complexity of GaN devices.

Part Context

This device belongs to the SuperFET family, representing onsemi's first generation of high-voltage superjunction MOSFETs. Originally developed by Fairchild Semiconductor, the product line was integrated into onsemi's portfolio following the 2016 acquisition. The FCPF11N60 serves as a foundational component in the broader SuperFET ecosystem, offering a balance between performance and manufacturability for general-purpose power conversion.

Replacement Considerations

The FCPF11N60F is a related variant featuring FRFET technology for faster reverse recovery. The FCPF11N60T denotes a tape-and-reel packaging option. Direct pin-compatible replacements from other manufacturers require verification of Rds(on) and Qg specifications to ensure equivalent thermal and switching performance.

FCPF11N60FCPF11N60
$2.36
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