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Product Detailed Parameters
- Description：MOSFET N-CH 600V 11A TO220F
- Series：SuperFET™
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：380mOhm @ 5.5A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：52 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：1490 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：36W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220F-3
- Package / Case：TO-220-3 Full Pack
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Overview
The FCPF11N60T is an N-channel enhancement mode MOSFET from the SuperFET series, manufactured by onsemi. It utilizes silicon technology in a TO-220-3 through-hole package. Key electrical parameters include a drain-source voltage (Vds) of 600 V and a continuous drain current (Id) of 11 A at 25°C. The device features a maximum on-resistance (Rds(on)) of 320 mΩ and a gate threshold voltage (Vgs(th)) of 5 V. Total gate charge (Qg) is 40 nC. Power dissipation (Pd) is rated at 36 W, with an operating temperature range from -55°C to +150°C.
Feature Summary
- SuperFET architecture employing charge balance technology for low conduction losses
- Optimized body diode reverse recovery characteristics for high dv/dt performance
- High avalanche energy capability verified through 100% avalanche testing
Applications
- Power Factor Correction (PFC) circuits
- Server and telecommunications power supplies
- LCD television power systems
- ATX power supplies
- Industrial power conversion applications
Procurement Notes
Verify the specific suffix 'T' against the official datasheet to confirm packaging details, as it typically denotes tube packaging. Ensure compatibility with required thermal management solutions given the 36 W power dissipation rating in the TO-220-3 package. Confirm RoHS compliance status via the manufacturer's latest material declaration documents before integration into regulated products.
Selection Notes
Select this component for high-voltage switching applications requiring efficient power conversion. The 600 V rating suits standard AC-DC and PFC topologies. Compare Rds(on) and Qg values against alternative SuperFET variants to optimize for either conduction or switching loss priorities. Ensure the driver circuit can handle the 5 V threshold and 40 nC gate charge requirements for reliable operation.
Part Context
This part belongs to the SuperFET family, representing onsemi's first generation of high-voltage superjunction MOSFETs. These devices integrate advanced trench gate technology to achieve superior performance compared to traditional planar structures. The FCPF11N60T variant specifically targets cost-sensitive yet high-efficiency power supply designs where reliability and reduced component count are critical.
Replacement Considerations
Direct substitutes within the same series include FCPF11N60 and FCPF11N60F. Verify pinout compatibility and thermal resistance specifications when cross-referencing with other manufacturers' 600V 11A TO-220 packages.
