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Product Detailed Parameters
- Description：MOSFET N-CH 650V 11A TO220F
- Series：SuperFET™
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：380mOhm @ 5.5A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：52 nC @ 10 V
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：1490 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：36W (Tc)
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220F-3
- Package / Case：TO-220-3 Full Pack
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Overview
The FCPF11N65 is an N-Channel SuperFET MOSFET featuring a 650 V drain-source voltage and 11 A continuous current rating. It exhibits a typical on-resistance of 320 mΩ and a gate charge of 40 nC. The device operates within a -55°C to +150°C temperature range and dissipates up to 36 W at 25°C case temperature. Packaged in a TO-220F, it supports through-hole mounting.
Feature Summary
- Utilizes super-junction charge balance technology for low on-resistance and reduced gate charge.
- Features ultra-low effective output capacitance to enhance switching performance.
- Includes 100% avalanche testing for improved ruggedness.
Applications
- Power Factor Correction (PFC)
- Server and telecom power supplies
- Flat Panel Display TV power
- ATX power supplies
Procurement Notes
Verify the manufacturer origin as Fairchild Semiconductor or its successor entity onsemi. Confirm the package marking matches 'FCPF11N65' and the packing method is tube. Ensure compliance with RoHS standards and check for any specific handling requirements related to the TO-220F lead frame.
Selection Notes
Select this component for high-voltage applications requiring efficient switching and low conduction losses. Consider the thermal resistance of 62.5°C/W for ambient cooling designs. Evaluate the 340 mJ single pulsed avalanche energy capability if inductive load protection is required without external snubbers.
Part Context
This part belongs to the first-generation SuperFET family developed by Fairchild Semiconductor. It represents an early implementation of super-junction technology designed to minimize conductive loss while providing superior dv/dt rates and higher avalanche energy tolerance compared to standard planar MOSFETs.
Replacement Considerations
Check datasheets for equivalent 650V, 11A N-channel MOSFETs in TO-220 packages. Verify that replacement parts meet the same RDS(on) and Qg specifications to maintain circuit efficiency and switching timing.
