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Product Detailed Parameters
- Description：MOSFET N-CH 650V 19A TO220F-3
- Series：SuperFET® III
- Mfr：onsemi
- Package：Bulk,Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：19A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：165mOhm @ 9.5A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 1.9mA
- Gate Charge (Qg) (Max) @ Vgs：35 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：1415 pF @ 400 V
- FET Feature：-
- Power Dissipation (Max)：35W (Tc)
- Operating Temperature：-55°C ~ 150°C
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220F-3
- Package / Case：TO-220-3 Full Pack
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Overview
The FCPF165N65S3L1 is an N-channel enhancement-mode MOSFET from the SuperFET3 series by onsemi. It features a 650 V drain-source voltage rating and a maximum continuous drain current of 19 A. The device has a typical on-resistance of 165 mΩ at 25°C and a gate charge of 35 nC. It operates within a temperature range of -55°C to +150°C, with a power dissipation of 35 W in a TO-220 package.
Feature Summary
- SuperFET3 technology integrates body diode for optimized switching performance
- Low on-resistance reduces conduction losses
- Fast switching characteristics minimize switching losses
- Enhanced avalanche ruggedness
Applications
- High-frequency power supplies
- Motor control applications
- Industrial inverters
- Uninterruptible power systems
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and check for specific environmental declarations if required. Ensure proper handling procedures are followed during storage and installation to maintain device integrity.
Selection Notes
Select this component for designs requiring high-voltage capability with low conduction losses. Consider thermal management requirements due to the specified power dissipation limits. Evaluate gate drive compatibility with the 35 nC gate charge requirement for optimal switching efficiency.
Part Context
Part of onsemi's SuperFET3 family, combining trench gate and field plate technologies. Designed for high-efficiency power conversion applications where size and weight constraints exist alongside performance demands.
Replacement Considerations
FCP165N65S3R0 offers similar electrical characteristics but may differ in packaging details. Verify pinout compatibility and thermal resistance values before substitution.
