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Product Detailed Parameters
- Description：FCPF165N65S3R0L - POWER MOSFET,
- Series：SuperFET® III
- Mfr：Fairchild Semiconductor
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：19A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：165mOhm @ 9.5A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 410µA
- Gate Charge (Qg) (Max) @ Vgs：35 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：1415 pF @ 400 V
- FET Feature：-
- Power Dissipation (Max)：35W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220F-3
- Package / Case：TO-220-3 Full Pack
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Overview
The FCPF165N65S3R0L is an N-channel Power MOSFET from the SuperFET III family, manufactured by onsemi. It features a 650V drain-source breakdown voltage and a maximum continuous drain current of 19A. The device exhibits a typical on-resistance (Rds(on)) of 165mΩ at a gate-source voltage of 10V. Packaged in a TO-220-3 through-hole case, it supports a junction temperature range from -55°C to +150°C with a power dissipation rating of 154W.
Feature Summary
- Utilizes SuperFET III charge balance technology for high-voltage super-junction performance
- Optimized for fast switching applications with low gate charge characteristics
- Designed to withstand rapid switching and high current stress conditions
Applications
- Telecommunications power supplies
- Server power supply units
- High-frequency DC-to-DC converters
Procurement Notes
Verify the manufacturer designation carefully, as Fairchild Semiconductor has been acquired by onsemi. Confirm that the component originates from the authorized onsemi supply chain rather than legacy Fairchild stock. Ensure the datasheet version matches the specific suffix requirements for the R0L tape-and-reel packaging configuration.
Selection Notes
Select this component when a 650V rating is required alongside moderate current handling capabilities. The TO-220-3 package facilitates efficient thermal management for medium-power designs. Consider the trade-off between the 165mΩ on-resistance and the 39nC gate charge for efficiency optimization in hard-switching topologies.
Part Context
This part belongs to the SuperFET III series, representing a transition from traditional planar MOSFETs to super-junction architectures. While originally associated with Fairchild Semiconductor branding, production and documentation are now managed under the onsemi portfolio. The series emphasizes improved figure-of-merit metrics compared to previous generations.
Replacement Considerations
Direct substitutes include the FCP165N65S3 and FCPF165N65S3R0. Verify pinout compatibility and ensure the replacement variant meets the specific packaging requirements of the target assembly.
