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Product Detailed Parameters
- Description：MOSFET N-CH 600V 16A TO220F
- Series：SuperFET™
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：260mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：70 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：2250 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：37.9W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220F-3
- Package / Case：TO-220-3 Full Pack
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Overview
The FCPF16N60 is a SuperFET MOSFET from onsemi, utilizing first-generation high superjunction technology with charge balance. It features an N-channel configuration in a TO-220-3 through-hole package. Key electrical parameters include a drain-source voltage (V_DSS) of 600 V and a continuous drain current (I_D) of 16 A at 25°C case temperature. The device exhibits a maximum on-resistance (R_DS(on)) of 260 mΩ and a gate charge (Q_g) of 55 nC. It supports a maximum power dissipation of 167 W at 25°C, with a junction-to-case thermal resistance (R_θJC) of 0.75 °C/W. The operating temperature range spans from -55°C to +150°C.
Feature Summary
- Employs first-generation superjunction technology for optimized charge balance.
- Delivers low conduction losses via reduced on-resistance characteristics.
- Provides enhanced switching performance and high dv/dt capability.
- Offers improved avalanche energy handling compared to standard planar devices.
Applications
- Power Factor Correction (PFC) circuits
- Server and telecommunications power supplies
- Flat Panel Display (FPD) television power sources
- ATX computer power supplies
- Industrial power applications
Procurement Notes
Verify the specific suffix against the official datasheet to confirm pinout and thermal characteristics. The FCPF variant typically differs in thermal resistance and package mounting style compared to the FCP version. Ensure the procurement specification matches the required junction-to-case thermal resistance value for your heatsink design. Confirm RoHS compliance status through the manufacturer's latest material declaration documents before finalizing orders.
Selection Notes
Select this component when designing systems requiring robust avalanche ruggedness and efficient high-voltage switching. The low gate charge facilitates easier driver interface and reduced switching losses. Consider the thermal management requirements based on the specific R_θJC value associated with the FCPF package variant. This device is suitable for applications demanding high reliability under significant electrical stress conditions.
Part Context
This part belongs to onsemi's SuperFET family, representing the first generation of high superjunction MOSFETs. These devices integrate charge balance technology to overcome traditional silicon limits. The family targets efficiency improvements in offline power conversion stages. The FCPF16N60 specifically addresses needs for compact, reliable power modules in consumer and industrial electronics.
Replacement Considerations
The FCP16N60 is a related variant within the same series but utilizes a different package type with distinct thermal properties. Verify that the alternative package meets the thermal dissipation requirements of the target application. Cross-referencing the exact thermal resistance values is critical when substituting between FCP and FCPF suffixes.
