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Product Detailed Parameters
- Description：MOSFET N-CH 600V 16A TO220F
- Series：SupreMOS™
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：199mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：52.3 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：2170 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：35.7W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220F-3
- Package / Case：TO-220-3 Full Pack
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Overview
The FCPF16N60NT is a single N-channel enhancement mode MOSFET from the onsemi SupreMOS family, utilizing Super Junction technology. It features a 600V drain-source voltage rating and a TO-220F package for through-hole mounting. Key electrical parameters include a maximum continuous drain current of 16A at 25°C case temperature, a typical on-resistance of 199mΩ at 10V gate drive, and a gate charge of 52.3nC. The device supports a junction temperature range of -55°C to +150°C with a power dissipation capacity of 134.4W.
Feature Summary
- Super Junction technology enables low on-resistance and reduced switching losses.
- High avalanche energy capability improves robustness in inductive load applications.
- Optimized gate charge characteristics facilitate efficient driver interface.
Applications
- Power Factor Correction (PFC) circuits
- Server and telecommunications power supplies
- Flat Panel Display (FPD) TV power adapters
Procurement Notes
Verify the specific suffix NT against official datasheets to confirm tape-and-reel packaging requirements. Confirm RoHS compliance status and lead times directly with authorized distributors or onsemi sales representatives prior to ordering. Ensure component authenticity through verified supply chain channels.
Selection Notes
Select this component for high-voltage switching applications requiring low conduction losses. Compare thermal resistance values against system heat sinking capabilities. Verify that the gate drive voltage aligns with the specified threshold and on-resistance conditions for optimal performance.
Part Context
This part belongs to the SupreMOS series, representing onsemi's first-generation Super Junction MOSFETs. These devices are engineered for high-efficiency power conversion, offering superior dv/dt rates and avalanche ruggedness compared to traditional planar technologies.
Replacement Considerations
Official substitutes within the same series include FCP16N60 and FCPF16N60. Verify pinout compatibility and thermal characteristics before substitution. Cross-reference datasheets for exact parameter matching.
