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Product Detailed Parameters
- Description：MOSFET N-CH 650V 20.6A TO220F
- Series：SuperFET® II
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：20.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：190mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：78 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3055 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：39W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220F-3
- Package / Case：TO-220-3 Full Pack
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Overview
The FCPF190N65FL1 is a single N-Channel Power MOSFET from the SuperFET II family, manufactured by onsemi. It features a 650V drain-source voltage rating and a typical on-resistance of 190 mOhms at 25°C. The device supports a continuous drain current of 20.6 A and operates within a junction temperature range of -55°C to +150°C. Packaged in a TO-220F Ultra narrow lead format, it integrates an internal fast recovery anti-parallel diode.
Feature Summary
- Integrates SuperFET II technology for optimized high-voltage performance and reduced switching losses.
- Includes a built-in fast recovery anti-parallel diode suitable for hard-switching applications.
- Utilizes FRFET structure to handle rapid switching transitions and high current stress.
Applications
- High-frequency power conversion circuits
- Hard-switching topologies requiring integrated body diodes
- Industrial motor drive systems
Procurement Notes
Verify component authenticity through authorized channels as this part may be obsolete. Confirm package dimensions match the TO-220F Ultra narrow lead specification. Ensure thermal management designs account for the specified power dissipation limits. Check for RoHS compliance status prior to integration into regulated assemblies.
Selection Notes
Select this component for designs requiring 650V blocking capability with low conduction losses. The integrated fast recovery diode simplifies circuit topology by eliminating external rectifiers. Verify gate charge requirements against driver capabilities to ensure efficient switching performance under load conditions.
Part Context
This device belongs to the SuperFET II series, which combines trench gate MOSFETs with fast recovery diodes. The FRFET designation indicates optimization for rugged operation under high dv/dt and current stress. It serves as a discrete solution for medium-power applications where efficiency and reliability are critical.
Replacement Considerations
FCPF190N65FL1-F154 is a confirmed variant with identical electrical characteristics but specific packaging suffixes. Verify pinout compatibility before substitution. Other SuperFET II devices with similar Rds(on) ratings may serve as alternatives if voltage and current specs align.
