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Product Detailed Parameters
- Description：MOSFET N-CH 650V 14A TO220F-3
- Series：SuperFET® III
- Mfr：onsemi
- Package：Bulk,Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：190mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 1.4mA
- Gate Charge (Qg) (Max) @ Vgs：30 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：1225 pF @ 400 V
- FET Feature：-
- Power Dissipation (Max)：33W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220F-3
- Package / Case：TO-220-3 Full Pack
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Overview
The FCPF190N65S3L1 is an N-Channel SuperFET III MOSFET manufactured by onsemi, designed for high-efficiency power conversion. It features a 650 V drain-source voltage rating and a maximum continuous drain current of 14 A at case temperature of 25°C. The device exhibits a typical on-resistance of 165 mΩ and a gate charge of 30 nC. It operates within a junction temperature range of -55°C to +150°C with a power dissipation capacity of 33 W in a TO-220-3 package.
Feature Summary
- Integrates SuperFET III technology utilizing charge balance techniques to minimize conduction losses and enhance switching performance.
- Provides low gate charge characteristics that facilitate easy driver compatibility and reduce switching energy dissipation.
- Engineered to withstand high dv/dt rates while maintaining robust electromagnetic interference (EMI) management capabilities.
Applications
- Telecommunications and server power supply units
- Industrial power distribution systems
- Uninterruptible power supply (UPS) architectures
- Solar photovoltaic energy conversion systems
Procurement Notes
Verify component authenticity through authorized onsemi distributors or certified partners. Confirm the specific suffix L1 matches design requirements as it denotes packaging variations. Check datasheet revisions for updated electrical limits. Ensure thermal management solutions align with the specified 33 W power dissipation rating under intended operating conditions.
Selection Notes
Select this component when designing circuits requiring 650 V blocking capability with optimized switching efficiency. The low gate charge supports high-frequency operation without excessive drive current demands. Evaluate thermal resistance parameters against heatsink constraints to maintain junction temperatures within safe operational boundaries during peak load scenarios.
Part Context
This device belongs to the SuperFET III family of high-voltage superjunction MOSFETs from onsemi. The series employs advanced silicon processes to achieve superior figure-of-merit values compared to conventional planar technologies. These components are engineered for applications demanding high reliability and reduced system footprint in medium-power conversion stages.
Replacement Considerations
Direct substitutes include FCPF165N65S3L1 and FCPF250N65S3L1 from the same manufacturer series. Verify pinout compatibility and ensure replacement parts meet identical voltage and current ratings before integration into existing board layouts.
