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Product Detailed Parameters
- Description：MOSFET N-CH 600V 21A TO-220F
- Series：-
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220F-3
- Package / Case：TO-220-3 Full Pack
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Overview
The FCPF21N60NT is a single N-Channel SupreMOS MOSFET manufactured by onsemi, designed for high-voltage switching applications. It features a 600V drain-source voltage rating and a continuous drain current of 21A at 25°C case temperature. The device utilizes Super Junction technology to achieve a low on-resistance of 240mΩ maximum at VGS=10V. Packaged in a TO-220F-3 through-hole housing, it supports junction temperatures up to +150°C with a power dissipation of 39W. Key electrical characteristics include a gate charge of 45nC and a threshold voltage range of 2V to 4V.
Feature Summary
- Super Junction technology enables low conduction losses and optimized switching performance.
- Enhanced avalanche ruggedness ensures reliability under harsh operating conditions.
- Optimized body diode reverse recovery characteristics reduce system component requirements.
Applications
- Power Factor Correction (PFC) circuits
- Server and telecommunications power supplies
- Flat panel TV power supplies
Procurement Notes
Verify the specific suffix 'NT' against the official datasheet to confirm package type and tape-and-reel packaging configuration. Confirm RoHS compliance status and REACH SVHC declarations prior to integration. Ensure thermal management solutions align with the specified power dissipation limits and junction temperature ratings for the target application environment.
Selection Notes
Select this component when a 600V N-Channel MOSFET with low on-resistance and high current capability is required. Compare the 21A continuous current rating and 240mΩ Rds(on) against alternative devices in the SupreMOS family. Consider the TO-220F-3 package for through-hole mounting requirements and verify that the gate charge specifications meet the driver capabilities of the intended circuit design.
Part Context
This part belongs to the onsemi SupreMOS series, which employs Super Junction technology for high-efficiency power switching. The series targets applications requiring robust performance in high-voltage environments. The FCPF21N60NT represents a specific current rating within this lineup, offering a balance between conduction loss and switching speed for general-purpose power conversion tasks.
Replacement Considerations
Check for direct substitutes such as FCPF22N60NT or FCPF11N60NT based on current handling needs. Verify pinout compatibility and thermal resistance values before substitution. Ensure that any replacement maintains the same voltage rating and package dimensions to fit existing board layouts without modification.
