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Product Detailed Parameters
- Description：MOSFET N-CH 800V 23A TO220F
- Series：SuperFET® II
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：800 V
- Current - Continuous Drain (Id) @ 25°C：23A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：220mOhm @ 11.5A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 2.3mA
- Gate Charge (Qg) (Max) @ Vgs：105 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4560 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：44W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220F-3
- Package / Case：TO-220-3 Full Pack
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Overview
The FCPF220N80 is an N-channel enhancement mode MOSFET from the SuperFET II series by onsemi. It features a maximum drain-source voltage of 800 V and a continuous drain current of 14 A. The device utilizes a TO-220F package for through-hole mounting with three pins. Key electrical parameters include a maximum drain-source resistance of 0.4 Ω, a typical gate charge of 43 nC at the specified gate-source voltage, and a forward voltage of 1.2 V. Power dissipation is rated at 35.7 W, with an operating temperature range spanning from -55°C to 150°C.
Feature Summary
- SuperFET II technology integration for optimized high-voltage performance
- Enhanced thermal management capabilities within the TO-220F package
- Low on-resistance design for efficient power switching
Applications
- High-voltage power supply circuits
- Industrial motor control systems
- Uninterruptible power supply (UPS) units
Procurement Notes
Verify the specific suffix designation against official datasheets to ensure correct pinout and electrical characteristics. Confirm RoHS compliance status and material composition details prior to integration. Check for any end-of-life notices or obsolescence warnings directly from onsemi documentation before finalizing component selection.
Selection Notes
Select this component for applications requiring robust 800 V blocking capability with moderate current handling. Evaluate thermal requirements carefully given the 35.7 W dissipation rating in the TO-220F form factor. Ensure gate drive voltages align with the specified gate charge parameters for optimal switching efficiency.
Part Context
This part belongs to onsemi's SuperFET II family, which combines trench gate and field plate technologies. These devices are engineered for high-voltage applications where efficiency and reliability are critical. The TO-220F package provides a balance between thermal performance and mechanical stability for through-hole implementations.
Replacement Considerations
Consult official cross-reference guides for verified substitutes. Ensure replacement parts match the 800 V rating, 14 A current capacity, and TO-220F package dimensions. Verify that alternative components maintain compatible gate charge and on-resistance specifications.
