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Product Detailed Parameters
- Description：MOSFET N-CH 650V 12A TO220F-3
- Series：SuperFET® III
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：250mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 1.2mA
- Gate Charge (Qg) (Max) @ Vgs：24 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：1010 pF @ 400 V
- FET Feature：-
- Power Dissipation (Max)：31W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220F-3
- Package / Case：TO-220-3 Full Pack
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Overview
The onsemi FCPF250N65S3L1 is an N-channel MOSFET from the SUPERFET III series, utilizing charge balance technology for low on-resistance and gate charge. It features a 650V drain-source voltage rating and a TO-220 package for through-hole mounting. Key electrical parameters include a maximum continuous drain current of 12A, a typical on-resistance of 250mΩ, and a gate charge of 24nC at specified conditions. The device supports a wide operating temperature range from -55°C to +150°C with a power dissipation of 39W.
Feature Summary
- SUPERFET III architecture provides optimized trade-off between conduction and switching losses
- High avalanche energy capability ensures robustness against transient voltage events
- Low thermal resistance facilitates efficient heat dissipation in through-hole applications
Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- DC-DC converters
Procurement Notes
Verify the specific suffix L1 against the official datasheet to confirm pinout configuration and packaging details. Ensure compatibility with existing PCB footprints and thermal management requirements. Confirm RoHS compliance status for the specific manufacturing batch before integration into regulated equipment designs.
Selection Notes
Select this component when a 650V rating is required with moderate current handling capabilities. The TO-220 package suits applications where manual assembly or standard heatsinking is preferred over surface mount technologies. Evaluate the 250mΩ on-resistance against system efficiency targets to ensure acceptable conduction losses under expected load conditions.
Part Context
This part belongs to the SUPERFET III family, which employs advanced superjunction technology to achieve high performance in medium-voltage applications. The series is designed to replace older planar MOSFETs, offering improved switching speeds and reduced electromagnetic interference due to lower gate charge characteristics.
Replacement Considerations
Direct replacements within the same series include NTPF250N65S3H. Verify pinout compatibility and thermal characteristics when substituting with other manufacturers' equivalents rated for 650V and similar current levels.
