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Product Detailed Parameters
- Description：MOSFET N-CH 650V 12A TO220F-3
- Series：SuperFET® III
- Mfr：onsemi
- Package：Tube,Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：250mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 1.2mA
- Gate Charge (Qg) (Max) @ Vgs：24 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：1010 pF @ 400 V
- FET Feature：-
- Power Dissipation (Max)：31W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220F-3
- Package / Case：TO-220-3 Full Pack
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Overview
The FCPF250N65S3R0L is a single N-channel SuperFET III MOSFET manufactured by onsemi. It features a 650V drain-source voltage rating and a maximum continuous drain current of 12A at 25°C. The device exhibits a typical on-resistance of 250mΩ and a gate charge of 24nC. It operates within a temperature range of -55°C to +150°C, with a power dissipation capacity of 39W in a TO-220 package.
Feature Summary
- Utilizes SuperFET III technology for optimized low on-resistance and fast switching performance.
- Designed for high-voltage applications with a 650V breakdown voltage capability.
- Features robust thermal management suitable for through-hole mounting environments.
Applications
- Industrial motor drives
- High-frequency switch-mode power supplies
- Uninterruptible power supply (UPS) systems
Procurement Notes
Verify the component status as this part number may be marked as not recommended for new designs. Confirm availability through authorized distributors and check for alternative lead times or substitute components if production constraints exist. Ensure compliance with RoHS and REACH standards before integration.
Selection Notes
Select this component for designs requiring a balance between conduction losses and switching speed in high-voltage circuits. The 250mΩ on-resistance supports moderate current levels up to 12A. Consider the TO-220 package for adequate heat sinking in industrial or server power applications where space allows for through-hole implementation.
Part Context
This device belongs to the SuperFET III family from onsemi, which employs charge-balanced superjunction technology. This architecture reduces both on-resistance and gate charge compared to traditional planar MOSFETs, improving efficiency in hard-switching applications. The series targets general-purpose high-voltage power switching needs.
Replacement Considerations
Check for direct pin-compatible alternatives within the same SuperFET III series, such as variants with different Rds(on) ratings like the FCP165N65S3R0L, ensuring voltage and current ratings meet system requirements without compromising thermal performance.
