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Product Detailed Parameters
- Description：MOSFET N-CH 800V 17A TO220F
- Series：PowerTrench®
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：800 V
- Current - Continuous Drain (Id) @ 25°C：17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：290mOhm @ 8.5A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 1.7mA
- Gate Charge (Qg) (Max) @ Vgs：75 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3205 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：40W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220F-3
- Package / Case：TO-220-3 Full Pack
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Overview
The FCPF290N80 is an N-channel enhancement mode MOSFET from the SuperFET II series by onsemi. It features a drain-source voltage (Vds) of 800 V and a continuous drain current (Id) of 14 A at 25 °C. The device has a maximum on-resistance (Rds(on)) of 2.9 Ω, measured at a gate-source voltage (Vgs) of 10 V. It utilizes a TO-220F package for through-hole mounting. The component operates within a temperature range of -55 °C to +150 °C junction temperature, with a power dissipation rating of 35.7 W.
Feature Summary
- SuperFET II technology integrates optimized gate charge and low on-resistance for improved switching efficiency.
- High voltage capability supports robust performance in demanding power conversion environments.
- Enhanced thermal design facilitates effective heat dissipation in through-hole applications.
Applications
- High-voltage DC-DC converters
- Industrial motor control systems
- Uninterruptible power supplies (UPS)
Procurement Notes
Verify the specific suffix code against official datasheets to confirm exact electrical tolerances and packaging variations. Ensure compatibility with existing thermal management solutions due to the specified power dissipation limits. Confirm RoHS compliance status for regulatory adherence in target markets.
Selection Notes
Select this component when high blocking voltage and moderate current handling are required in a through-hole format. Evaluate thermal resistance requirements against the 35.7 W dissipation limit. Compare gate charge specifications against driver capabilities to ensure efficient switching transitions.
Part Context
This part belongs to the SuperFET II family, which combines trench gate and field plate technologies. The series targets high-efficiency power switching applications requiring reliable operation under high voltage stress. The TO-220F package provides mechanical stability for industrial-grade deployments.
Replacement Considerations
Direct substitutes include FCPF400N80Z and FCP850N80Z from the same manufacturer. Verify pinout compatibility and thermal characteristics before substitution. Cross-reference Rds(on) and Qg values to ensure equivalent circuit performance.
