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Product Detailed Parameters
- Description：MOSFET N-CH 600V 10.2A TO220F-3
- Series：SuperFET® II
- Mfr：onsemi
- Package：Tube,Tube,Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：10.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：380mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：40 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1665 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：31W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220F-3
- Package / Case：TO-220-3 Full Pack
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Overview
The FCPF380N60_F152 is an N-Channel SuperFET II MOSFET manufactured by onsemi (formerly Fairchild Semiconductor). It features a 600V drain-source voltage rating and a maximum on-resistance of 380 mΩ. The device supports a continuous drain current of 10.2 A at 25°C case temperature, with a pulsed current capability of 30.6 A. Key electrical parameters include a typical total gate charge of 30 nC and an effective output capacitance of 95 pF. It operates within a junction temperature range of -55°C to +150°C and utilizes a TO-220FG package.
Feature Summary
- Utilizes charge balance technology for low on-resistance and reduced gate charge
- Capable of withstanding extreme dv/dt rates and high avalanche energy
- Provides superior switching performance to minimize conduction loss
Applications
- LCD, LED, and PDP TV lighting systems
- Solar inverters
- AC-DC power supplies
Procurement Notes
Verify the component status carefully as this part was originally produced by Fairchild Semiconductor prior to its acquisition by onsemi. Confirm that the specific ordering suffix matches the required packaging type. Ensure compatibility with legacy designs referencing Fairchild documentation. Validate authenticity through authorized distribution channels to avoid counterfeit components.
Selection Notes
Select this component for applications requiring robust avalanche energy handling and high efficiency in power conversion circuits. Consider the thermal resistance characteristics when designing heat dissipation solutions. Evaluate the gate charge requirements against the driving circuit capabilities to ensure optimal switching speeds.
Part Context
This device belongs to the SuperFET II family, representing an early generation of high-voltage super-junction MOSFETs from Fairchild Semiconductor. The product line focuses on minimizing system size and improving efficiency in AC/DC power conversion applications through advanced silicon technologies.
Replacement Considerations
FCPF380N60-F154
FAQ
What is the breakdown voltage at elevated temperatures?
The drain-to-source breakdown voltage increases to 650 V when the junction temperature reaches 150°C.
Is the device tested for avalanche ruggedness?
Yes, the datasheet specifies that the device undergoes 100% avalanche testing.
