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Product Detailed Parameters
- Description：MOSFET N-CH 600V 10.2A TO220F-3
- Series：SuperFET® II
- Mfr：onsemi
- Package：Tube,Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：10.2A (Tj)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：380mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：40 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1665 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：31W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220F-3
- Package / Case：TO-220-3 Full Pack
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Overview
The onsemi FCPF380N60-F154 is an N-Channel enhancement-mode MOSFET from the SUPERFET II series, utilizing high-voltage super-junction charge balance technology. It features a 600 V drain-source voltage rating and a typical RDS(on) of 330 mΩ at VGS=10V. The device supports a continuous drain current of 10.2 A at TC=25°C and withstands extreme dv/dt rates up to 20 V/ns. Key electrical parameters include a total gate charge (Qg) of 30 nC, single pulsed avalanche energy of 211.6 mJ, and a maximum junction temperature of 150°C.
Feature Summary
- Super-junction charge balance technology minimizes conduction loss and provides superior switching performance.
- Capable of withstanding extreme dv/dt rates and higher avalanche energy for robust operation.
- Ultra-low gate charge and effective output capacitance enhance system efficiency.
- 100% avalanche tested to ensure reliability under inductive load conditions.
Applications
- Computing and display power supplies
- Telecom and server power supplies
- Industrial power supplies
- Lighting, chargers, and adapters
Procurement Notes
Verify the specific ordering suffix -F154 corresponds to the TO-220F package with 50 units per tube. Confirm RoHS compliance and lead-free status as stated in the datasheet. Ensure application requirements align with the absolute maximum ratings, particularly regarding thermal resistance and junction temperature limits during design validation.
Selection Notes
Select this component for applications requiring low conduction losses and high switching speeds within the 600 V range. The low gate charge reduces driver power consumption. Evaluate thermal management needs based on the 4°C/W junction-to-case thermal resistance. Verify that the 10.2 A continuous current rating meets the circuit's peak and RMS load requirements under expected operating temperatures.
Part Context
This part belongs to the SUPERFET II family of high-voltage super-junction MOSFETs from onsemi. These devices are designed to replace traditional planar MOSFETs in high-frequency power conversion applications. The family utilizes advanced silicon processes to achieve better figure-of-merit characteristics compared to standard technologies.
Replacement Considerations
Check pinout compatibility if substituting other 600 V N-Channel MOSFETs in TO-220 packages. Verify that replacement devices meet or exceed the 330 mΩ RDS(on) and 30 nC Qg specifications to maintain system efficiency. Ensure avalanche energy ratings are sufficient for the specific inductive loads present in the design.
