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Product Detailed Parameters
- Description：MOSFET N-CH 600V 10.2A TO220F
- Series：SuperFET® II
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：10.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：380mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：40 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1665 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：31W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220F-3
- Package / Case：TO-220-3 Full Pack
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Overview
The FCPF380N60 is a single N-channel SuperFET II FRFET MOSFET from onsemi, utilizing charge balance technology for high-voltage applications. It features a 600V drain-source voltage rating and a continuous drain current of 10.2A at 25°C case temperature. The device exhibits a low static drain-source on-resistance of 0.33Ω at VGS=10V and ID=5A. Key dynamic parameters include a total gate charge of 30nC typical and an input capacitance of 1250pF typical. It supports junction temperatures up to 150°C and offers robust avalanche energy handling capabilities.
Feature Summary
- Employs charge balance technology to achieve low conduction losses and superior switching performance.
- Capable of withstanding extreme dv/dt rates and higher avalanche energy levels.
- Designed to reduce system volume while improving overall power supply efficiency.
Applications
- General-purpose power supplies
- DC-DC converters
- High-frequency switching circuits
Procurement Notes
Verify the specific suffix (e.g., F154) against official datasheets to confirm exact electrical tolerances and packaging variations. Ensure compatibility with thermal management requirements given the TO-220 package constraints. Cross-reference absolute maximum ratings with actual operating conditions to prevent overstress during design validation.
Selection Notes
Select this component for designs requiring high-voltage isolation with optimized switching speed. The low gate charge facilitates efficient driver selection, reducing control circuit complexity. Evaluate thermal resistance characteristics against the expected ambient temperature and heat sinking strategy to maintain safe junction operation under load.
Part Context
This part belongs to the SuperFET II family, representing onsemi's advanced superjunction MOSFET technology. It succeeds earlier generations by offering improved figure-of-merit metrics through reduced on-resistance and gate charge. The series targets modern compact power architectures demanding higher efficiency in constrained spaces.
Replacement Considerations
Consult official substitution guides for direct equivalents within the SuperFET II lineup. Verify pinout compatibility and thermal interface dimensions before integrating alternative part numbers into existing PCB layouts.
