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Product Detailed Parameters
- Description：MOSFET N-CH 600V 10.2A TO220F-3
- Series：SuperFET® II
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：10.2A (Tj)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：380mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：45 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1770 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：31W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220F-3
- Package / Case：TO-220-3 Full Pack
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Overview
The onsemi FCPF380N60E-F154 is an N-Channel SUPERFET II MOSFET utilizing charge balance technology. It features a 600V drain-source voltage and a typical RDS(on) of 320 mΩ at VGS=10V. The device offers a typical total gate charge (Qg) of 34 nC and effective output capacitance (Coss.eff) of 97 pF. Rated for continuous drain currents up to 10.2A at 25°C, it withstands extreme dv/dt rates and high avalanche energy. The component operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Utilizes charge balance technology for low conduction loss and superior switching performance
- Capable of withstanding extreme dv/dt rates and higher avalanche energy
- Designed to manage EMI issues and facilitate easier design implementation
Applications
- Computing and display power supplies
- Telecom and server power supplies
- Industrial power supplies
- Lighting, chargers, and adapters
Procurement Notes
Verify the specific ordering suffix '-F154' corresponds to the TO-220F package configuration. Confirm RoHS compliance status through official documentation. Validate that the requested part number matches the exact electrical characteristics required for the target application circuit.
Selection Notes
Select this component for applications requiring high-voltage superjunction performance with optimized gate charge. Ensure thermal management aligns with the specified junction-to-case thermal resistance. Verify that the maximum pulsed drain current and avalanche energy ratings exceed the peak operational demands of the system.
Part Context
This device belongs to the SUPERFET II family from onsemi. It represents a high-voltage superjunction MOSFET series designed to minimize conduction losses while providing robust switching capabilities. The technology focuses on balancing charge to achieve low on-resistance without compromising breakdown voltage integrity.
Replacement Considerations
Consult official substitution guides for compatible devices within the SUPERFET II family. Verify pinout compatibility and thermal characteristics before replacing existing components in established designs.
