FCPF380N65FL1-F154

$3.20

Description：MOSFET N-CH 650V 10.2A TO220F-3
Series：FRFET®, SuperFET® II
Mfr：onsemi
Package：Tube

SKU:7e473f6d1e14 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 650V 10.2A TO220F-3
Series：FRFET®, SuperFET® II
Mfr：onsemi
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：10.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：380mOhm @ 5.1A, 10V
Vgs(th) (Max) @ Id：5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：43 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1680 pF @ 100 V
FET Feature：-
Power Dissipation (Max)：33W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220F-3
Package / Case：TO-220-3 Full Pack

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FCPF380N65FL1-F154

Overview

The FCPF380N65FL1-F154 is an N-Channel SUPERFET II MOSFET utilizing charge balance super-junction technology. It features a 650 V drain-source voltage and a typical on-resistance of 320 mΩ at 10 V gate drive. The device supports a continuous drain current of 10.2 A at 25°C case temperature. Key electrical parameters include a total gate charge of 33 nC, effective output capacitance of 165 pF, and a single pulsed avalanche energy rating of 212 mJ. It operates within a junction temperature range of -55°C to +150°C.

Feature Summary

SUPERFET II high-voltage super-junction architecture with charge balance technology for low conduction loss and superior switching performance.
Optimized body diode reverse recovery characteristics (FRFET) designed to remove additional components and improve system reliability.
Capable of withstanding extreme dv/dt rates and validated for 100% avalanche testing.

Applications

Computing and display power supplies
Telecom and server power supplies
Industrial power supplies
Lighting, chargers, and adapters

Procurement Notes

Verify the specific ordering suffix FL1 against official documentation to confirm package and shipping details. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer. Ensure the component meets all applicable safety standards and regulatory requirements for the intended end-use application before procurement.

Selection Notes

Select this component for designs requiring high efficiency in power conversion systems where miniaturization is critical. The low gate charge and optimized reverse recovery support higher switching frequencies. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance and derating curves for continuous operation.

Part Context

This part belongs to the SUPERFET II family from onsemi, representing a high-voltage super-junction MOSFET series. The FRFET designation indicates optimized reverse recovery performance of the intrinsic body diode. The TO-220F Ultra Narrow Lead package provides a robust through-hole mounting solution suitable for various power electronics applications.

Replacement Considerations

Consult official cross-reference lists for verified substitutes. Ensure any replacement matches the 650 V rating, package type, and electrical characteristics such as RDS(on) and Qg. Verify that alternative components meet the same thermal and avalanche energy specifications.