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Product Detailed Parameters
- Description：MOSFET N-CH 800V 1.6A TO220F
- Series：SuperFET® II
- Mfr：Fairchild Semiconductor
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：800 V
- Current - Continuous Drain (Id) @ 25°C：1.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：4.3Ohm @ 800mA, 10V
- Vgs(th) (Max) @ Id：4.5V @ 160µA
- Gate Charge (Qg) (Max) @ Vgs：8.8 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：355 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：19.2W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220F-3
- Package / Case：TO-220-3 Full Pack
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Overview
The FCPF4300N80Z is an N-Channel SuperFET II MOSFET from Fairchild Semiconductor, utilizing super-junction charge balance technology. It features a drain-source voltage (V_DSS) of 800 V and a continuous drain current (I_D) of 1.6 A at case temperature (Tc). The device is housed in a TO-220F-3 through-hole package with a thermal resistance rating supporting 19.2 W dissipation at Tc. Key electrical parameters include a maximum gate-source voltage (V_GS) of ±20 V and a typical on-resistance (R_DS(on)) optimized for low conduction losses.
Feature Summary
- Super-junction architecture enables high breakdown voltage with reduced on-resistance
- Charge balance technology minimizes switching losses for improved efficiency
- Enhanced thermal performance via TO-220F-3 leaded package design
Applications
- High-voltage power supply circuits
- Industrial motor control systems
- Uninterruptible power supply (UPS) inverters
Procurement Notes
Verify the manufacturer designation carefully, as Fairchild Semiconductor's discrete product line has been integrated into ON Semiconductor. Confirm that the part number suffix matches the specific revision required for your design, ensuring compatibility with updated datasheet specifications and pinout definitions before finalizing procurement orders.
Selection Notes
Select this component when designing circuits requiring 800 V blocking capability with moderate current handling up to 1.6 A. The SuperFET II technology offers superior switching performance compared to conventional planar MOSFETs. Ensure the application environment supports the thermal requirements of the TO-220F-3 package for optimal heat dissipation during continuous operation.
Part Context
This device belongs to the SuperFET II family, representing Fairchild's high-voltage super-junction MOSFET series. These components leverage advanced silicon technology to achieve higher efficiency in power conversion applications. The FCPF4300N80Z specifically targets robust industrial and commercial power management solutions requiring reliable high-voltage switching capabilities.
Replacement Considerations
Check for equivalent parts within the SuperFET II family or other 800 V super-junction MOSFETs with compatible pinouts and thermal characteristics. Verify that any substitute maintains similar R_DS(on) values and switching speeds to ensure circuit performance consistency without redesigning the gate drive network.
