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Product Detailed Parameters
- Description：MOSFET N-CH 800V 1.6A TO220F
- Series：SuperFET® II
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：800 V
- Current - Continuous Drain (Id) @ 25°C：1.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：4.3Ohm @ 800mA, 10V
- Vgs(th) (Max) @ Id：4.5V @ 160µA
- Gate Charge (Qg) (Max) @ Vgs：8.8 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：355 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：19.2W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220F-3
- Package / Case：TO-220-3 Full Pack
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Overview
The FCPF4300N80Z is an N-channel SuperFET II MOSFET from onsemi, utilizing charge balance technology for low conduction losses. It features a drain-to-source voltage (Vdss) of 800 V and a continuous drain current (Id) of 1.6 A at 25°C case temperature. The device is housed in a TO-220F package.
Feature Summary
- SuperFET II architecture based on charge balance technology
- Optimized for minimal conduction loss
- Reduced gate charge performance
Applications
- High-voltage power supply designs
- Industrial switching applications
Procurement Notes
Verify the specific datasheet revision when sourcing components. Confirm that the TO-220F package matches your thermal management requirements. Ensure the 1.6 A current rating aligns with your circuit's maximum load conditions under specified case temperatures.
Selection Notes
Select this component for applications requiring high-voltage blocking capability with moderate current handling. The SuperFET II technology offers advantages in efficiency compared to standard planar MOSFETs. Consider the thermal resistance of the TO-220F package for heat dissipation planning.
Part Context
This part belongs to the SuperFET II family, which employs super-junction (SJ) technology. This family is designed to provide superior performance metrics compared to traditional high-voltage MOSFETs, specifically targeting efficiency improvements in power conversion systems.
Replacement Considerations
Check for direct pin-compatible alternatives within the same SuperFET II series or other 800V N-channel MOSFETs with similar Rds(on) and gate charge specifications. Verify package compatibility before substitution.
