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Product Detailed Parameters
- Description：MOSFET N-CH 600V 7.4A TO220F
- Series：SuperFET® II
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：7.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：600mOhm @ 3.7A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：26 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1120 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：89W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220F-3
- Package / Case：TO-220-3 Full Pack
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Overview
The FCPF600N60Z is a single N-channel power MOSFET from onsemi's SuperFET II series, manufactured using silicon technology. It features a TO-220-3 through-hole package and operates with a drain-source voltage of 650 V and a continuous drain current of 7.4 A at case temperature. The device exhibits a maximum on-resistance of 600 mΩ at 10 V gate drive. Key electrical characteristics include a gate charge of 20 nC, threshold voltage of 3.5 V, and power dissipation of 28 W. It supports an operating junction temperature range from -50°C to +150°C.
Feature Summary
- Integrated SuperFET II technology for optimized high-voltage performance
- Enhancement mode N-channel configuration for standard switching applications
- Through-hole mounting in a TO-220-3 package for robust thermal management
Applications
- High-voltage power supply circuits
- Industrial motor control systems
- General-purpose switching applications
Procurement Notes
Verify component authenticity against official onsemi documentation due to End-of-Life status. Confirm RoHS compliance requirements as specified in the datasheet. Check for specific ordering suffixes if available. Ensure design-in compatibility with existing thermal and electrical constraints before finalizing procurement plans.
Selection Notes
Select this component for designs requiring 650 V blocking capability with moderate current handling. The TO-220-3 package suits applications needing reliable through-hole assembly. Consider the 600 mΩ on-resistance for efficiency calculations. Evaluate thermal dissipation limits relative to the 28 W power rating under expected operating conditions.
Part Context
This part belongs to the SuperFET II family, designed for high-voltage silicon MOSFET applications. It represents a specific variant within onsemi's discrete transistor portfolio, focusing on reliability and performance in medium-power switching environments.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Verify cross-reference data directly from manufacturer resources.
