SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The FCPF600N65S3R0L is an N-channel SuperFET III power MOSFET manufactured by onsemi. It features a 650V drain-source voltage rating and a maximum continuous drain current of 6A at 25°C. The device exhibits a typical on-resistance of 493 milliohms and a low gate charge of 11 nanocoulombs. Designed for high-voltage applications, it operates within a temperature range of -55°C to +150°C and utilizes a TO-220F package.
Verify the specific suffix L against official datasheets to confirm packaging details, as suffixes may indicate variations in tube quantity or reel specifications. Ensure compatibility with thermal management requirements for the TO-220F package. Confirm RoHS compliance status directly from the manufacturer's documentation before integration into designs.
Select this component for high-voltage applications requiring efficient switching and low conduction losses. The low gate charge facilitates easier driver design and reduces switching losses. Consider the 6A current rating and thermal dissipation capabilities of the TO-220F package when designing heat sinks and circuit layouts for target operating temperatures.
This part belongs to the SuperFET III family, which employs advanced super-junction technology. This family is characterized by optimized charge balance, resulting in improved efficiency compared to traditional planar MOSFETs. The Easy Drive series specifically targets applications where EMI management and simplified gate drive design are critical priorities.
Direct substitutes include other SuperFET III devices with similar voltage and current ratings, such as the FCP600N65S3R0. Verify pinout compatibility and thermal characteristics when replacing components to ensure seamless integration without redesigning the PCB layout.
It utilizes SuperFET III super-junction technology with charge balance, which minimizes conduction loss while maintaining low gate charge.
Yes, the device data specifies that these devices are 100% avalanche tested.