FCPF600N65S3R0L

FCPF600N65S3R0L

$0.67
  • Description:MOSFET N-CH 650V 6A TO220F-3
  • Series:SuperFET® III
  • Mfr:onsemi
  • Package:Bulk,Tube,Tube

SKU:e422872b7f34 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N-CH 650V 6A TO220F-3
  • Series:SuperFET® III
  • Mfr:onsemi
  • Package:Bulk,Tube,Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):650 V
  • Current - Continuous Drain (Id) @ 25°C:6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:600mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id:4.5V @ 600µA
  • Gate Charge (Qg) (Max) @ Vgs:11 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:465 pF @ 400 V
  • FET Feature:-
  • Power Dissipation (Max):24W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220F-3
  • Package / Case:TO-220-3 Full Pack

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FCPF600N65S3R0L

Overview

The FCPF600N65S3R0L is an N-channel SuperFET III power MOSFET manufactured by onsemi. It features a 650V drain-source voltage rating and a maximum continuous drain current of 6A at 25°C. The device exhibits a typical on-resistance of 493 milliohms and a low gate charge of 11 nanocoulombs. Designed for high-voltage applications, it operates within a temperature range of -55°C to +150°C and utilizes a TO-220F package.

Feature Summary

  • Utilizes SuperFET III super-junction technology with charge balance for low on-resistance and reduced gate charge.
  • Provides superior switching performance and withstands extreme dv/dt rates.
  • Designed to minimize conduction loss and manage EMI issues through the Easy Drive series architecture.

Applications

  • Computing and display power supplies
  • Telecom and server power supplies
  • Industrial power supplies
  • Lighting, chargers, and adapters

Procurement Notes

Verify the specific suffix L against official datasheets to confirm packaging details, as suffixes may indicate variations in tube quantity or reel specifications. Ensure compatibility with thermal management requirements for the TO-220F package. Confirm RoHS compliance status directly from the manufacturer's documentation before integration into designs.

Selection Notes

Select this component for high-voltage applications requiring efficient switching and low conduction losses. The low gate charge facilitates easier driver design and reduces switching losses. Consider the 6A current rating and thermal dissipation capabilities of the TO-220F package when designing heat sinks and circuit layouts for target operating temperatures.

Part Context

This part belongs to the SuperFET III family, which employs advanced super-junction technology. This family is characterized by optimized charge balance, resulting in improved efficiency compared to traditional planar MOSFETs. The Easy Drive series specifically targets applications where EMI management and simplified gate drive design are critical priorities.

Replacement Considerations

Direct substitutes include other SuperFET III devices with similar voltage and current ratings, such as the FCP600N65S3R0. Verify pinout compatibility and thermal characteristics when replacing components to ensure seamless integration without redesigning the PCB layout.

FAQ

What technology does the FCPF600N65S3R0L use to achieve low on-resistance?

It utilizes SuperFET III super-junction technology with charge balance, which minimizes conduction loss while maintaining low gate charge.

Is the FCPF600N65S3R0L avalanche tested?

Yes, the device data specifies that these devices are 100% avalanche tested.

FCPF600N65S3R0LFCPF600N65S3R0L
$0.67
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