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Product Detailed Parameters
- Description：POWER FIELD-EFFECT TRANSISTOR, 6
- Series：SupreMOS™
- Mfr：Fairchild Semiconductor
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：6.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：520mOhm @ 3.4A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：35.6 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：960 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：30.5W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220F-3
- Package / Case：TO-220-3 Full Pack
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Overview
The FCPF7N60NT is a single N-channel power MOSFET manufactured by Fairchild Semiconductor, belonging to the UniFET-II series. It features a 600V drain-source voltage rating and supports a continuous drain current of 6.5A at case temperature. The device utilizes a TO-220F-3 through-hole package with an isolated flange for thermal management. Key electrical characteristics include a maximum on-resistance of 1.25 ohms at 10V gate drive and a typical gate charge of 17nC. It operates within a junction temperature range of -55°C to 150°C.
Feature Summary
- UniFET-II technology optimized for high-voltage switching applications
- Through-hole TO-220F-3 package design for robust mechanical mounting
- Isolated flange construction facilitating efficient heat dissipation
Applications
- High-voltage DC-DC converter circuits
- Power supply switch-mode designs
- General-purpose power switching systems
Procurement Notes
Verify component authenticity against official Fairchild Semiconductor documentation. Confirm that the specific part number matches the UniFET-II series specifications. Ensure the TO-220F-3 package variant aligns with your board layout requirements. Check for any obsolescence notices or lifecycle status updates from the manufacturer before finalizing procurement plans.
Selection Notes
Select this component when a 600V blocking capability is required alongside moderate current handling in a through-hole configuration. The 1.25 ohm on-resistance suits lower-power applications where conduction losses are manageable. Consider the 17nC gate charge for driver compatibility in standard frequency switching environments.
Part Context
This device is part of the broader Fairchild power MOSFET portfolio, specifically utilizing the UniFET-II architecture. It serves as a discrete solution for medium-power isolation and conversion tasks. The TO-220F-3 form factor provides a standardized footprint for legacy and new industrial electronics designs requiring reliable thermal performance.
Replacement Considerations
The FCP7N60 is a documented equivalent offering similar 600V and 7A ratings in a comparable TO-220 package. Verify pinout compatibility and exact on-resistance values before substitution.
