ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 600V 6.8A TO220F
- Series：SupreMOS™
- Mfr：onsemi
- Package：Tube,Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：6.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：520mOhm @ 3.4A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：35.6 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：960 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：30.5W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220F-3
- Package / Case：TO-220-3 Full Pack
Download product information
Overview
The FCPF7N60NT is a single N-channel enhancement-mode MOSFET from the SupreMOS series, manufactured by onsemi. It utilizes deep trench fill super-junction technology to achieve low specific on-resistance. The device features a TO-220F-3 through-hole package with a maximum drain-source voltage of 600 V and a continuous drain current of 10.8 A at case temperature. Key electrical parameters include a maximum Rds(on) of 299 mΩ, a gate threshold voltage of 2 V, and a typical gate charge of 27.4 nC at 10 V. It supports a power dissipation of 32.1 W and operates within a junction temperature range of -55 °C to +150 °C.
Feature Summary
- Employs deep trench fill super-junction technology for optimized performance
- Provides low specific on-resistance characteristics
- Designed for high-efficiency switching applications
Applications
- Switching power supplies
- Low voltage motor drives
- LED lighting systems
Procurement Notes
Verify the exact suffix configuration against the manufacturer's latest datasheet to ensure compatibility with required thermal and electrical specifications. Confirm RoHS compliance status and REACH SVHC declarations prior to integration. Check for any active lifecycle notices or obsolescence warnings directly from onsemi documentation before finalizing procurement plans.
Selection Notes
Select this component for designs requiring robust 600 V blocking capability in a standard through-hole format. The SupreMOS technology offers advantages in conduction losses compared to traditional structures. Ensure adequate heatsinking is provided to manage the 32.1 W power dissipation rating effectively under continuous load conditions.
Part Context
This part belongs to the SupreMOS family, representing onsemi's next-generation high-voltage super-junction technology. It distinguishes itself from previous generations through advanced manufacturing processes that minimize specific on-resistance while maintaining reliable switching performance in power electronics applications.
Replacement Considerations
Direct substitutes are not explicitly confirmed in the provided source material. Evaluate alternative SupreMOS variants based on matching voltage, current, and package constraints.
