FCPF7N60YDTU

$0.75

Description：MOSFET N-CH 600V 7A TO220F-3
Series：SuperFET™
Mfr：onsemi
Package：Tube,Tube

SKU:e33b3e1a3162 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 600V 7A TO220F-3
Series：SuperFET™
Mfr：onsemi
Package：Tube,Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：600mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id：5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：30 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：920 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：31W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220F-3 (Y-Forming)
Package / Case：TO-220-3 Full Pack, Formed Leads

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FCPF7N60YDTU

Overview

The FCPF7N60YDTU is a single N-Channel SuperFET MOSFET manufactured by onsemi, designed for high-efficiency power switching applications. It features a 600V drain-source breakdown voltage and supports a continuous drain current of 7A. The device exhibits a maximum on-resistance of 530 mOhms at room temperature, with a gate charge of 30 nC and a threshold voltage typically around 3V. Packaged in a TO-220F-3 (Full Pack) configuration, it offers a power dissipation rating of 31W. The component operates within a junction temperature range of -55°C to +150°C, ensuring reliability in demanding thermal environments.

Feature Summary

Utilizes SuperFET technology to achieve low on-resistance and reduced gate charge for improved efficiency.
Features a robust TO-220F-3 full-pack package designed for through-hole mounting and enhanced thermal management.
Provides high-voltage capability with a 600V drain-source breakdown voltage suitable for general-purpose switching.

Applications

General-purpose power switching circuits
DC-DC converter topologies
High-frequency power supply designs

Procurement Notes

Verify the specific suffix 'YDTU' against official onsemi documentation to confirm the exact packaging type, as suffixes often denote tape-and-reel or specific form factors distinct from standard tubes. Ensure the procurement channel provides valid RoHS compliance data and original manufacturer traceability. Cross-reference the Mouser part number 512-FCPF7N60YDTU with the official datasheet to confirm parameter consistency before finalizing orders.

Selection Notes

Select this component when a through-hole N-Channel MOSFET with 600V rating and approximately 7A continuous current capacity is required. The TO-220F-3 package is suitable for applications needing moderate thermal performance without additional heatsinking constraints. Compare the 530 mOhm on-resistance against system loss requirements and ensure the 30 nC gate charge aligns with the driving circuit's capabilities for optimal switching speed.

Part Context

This device belongs to the SuperFET family from onsemi, which integrates advanced trench gate technology to minimize conduction and switching losses. The FCPF7N60 series shares similar electrical characteristics but varies primarily in packaging options, such as the TO-220AB or TO-220F formats. The YDTU suffix specifically identifies the TO-220F-3 full-pack variant, distinguishing it from other mechanical configurations within the same electrical family.

Replacement Considerations

Direct replacements include FCP7N60 and FCD7N60TM, which share identical electrical specifications but differ in package style (TO-220-3 vs. DPAK). Verify pinout compatibility and thermal resistance differences when substituting these parts in existing PCB layouts.