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Product Detailed Parameters
- Description：MOSFET N-CH 800V 6A TO220F
- Series：SuperFET® II
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：800 V
- Current - Continuous Drain (Id) @ 25°C：6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：850mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 600µA
- Gate Charge (Qg) (Max) @ Vgs：29 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1315 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：28.4W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220F-3
- Package / Case：TO-220-3 Full Pack
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Overview
The FCPF850N80Z is an N-Channel SuperFET II MOSFET from onsemi, utilizing super-junction charge balance technology. It features a drain-source voltage (Vds) of 800 V and a continuous drain current (Id) of 6 A at case temperature. The device exhibits a maximum on-resistance (Rds(on)) of 850 mΩ. Key electrical parameters include a gate threshold voltage (Vgs(th)) of 2.5 V, total gate charge (Qg) of 29 nC, input capacitance (Ciss) of 1315 pF, rise time of 10 ns, and fall time of 4.5 ns. It operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Integrates super-junction charge balance technology for low conduction losses
- Includes integrated electrostatic discharge (ESD) protection circuitry
- Optimized for high-voltage operation with fast switching capabilities
- Designed to withstand rapid switching and high current stress conditions
Applications
- High-frequency power conversion circuits
- Industrial motor control systems
- Uninterruptible power supply (UPS) units
- High-voltage DC-DC converter topologies
Procurement Notes
Verify the specific suffix 'Z' against the manufacturer's latest datasheet to confirm RoHS compliance status and packaging type. Ensure the ordering part number matches the exact pinout and thermal characteristics required by the design. Cross-reference the component marking with official onsemi identification guides to prevent counterfeit substitution during assembly.
Selection Notes
Select this component for designs requiring high blocking voltage with minimized switching losses. The low gate charge supports efficient driver performance in high-speed applications. Evaluate thermal management requirements based on the specified power dissipation limits. Confirm that the package footprint aligns with the printed circuit board layout constraints.
Part Context
This device belongs to the SuperFET II family, representing onsemi's high-voltage super-junction MOSFET series. The technology leverages charge balance principles to achieve superior performance compared to traditional planar structures. This family targets applications demanding high efficiency and reduced electromagnetic interference through optimized switching dynamics.
Replacement Considerations
Direct substitutes must match the 800V rating, N-channel configuration, and TO-220F-3 package. Verify equivalent Rds(on) and Qg values to maintain circuit efficiency. Check for identical pin assignments before integration.
