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Product Detailed Parameters
- Description：MOSFET N-CH 800V 1.6A IPAK
- Series：SuperFET® II
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：800 V
- Current - Continuous Drain (Id) @ 25°C：1.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：4.3Ohm @ 800mA, 10V
- Vgs(th) (Max) @ Id：4.5V @ 160µA
- Gate Charge (Qg) (Max) @ Vgs：8.8 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：355 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：27.8W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：IPAK
- Package / Case：TO-251-3 Short Leads, IPAK, TO-251AA
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Overview
The FCU4300N80Z is an N-channel enhancement-mode MOSFET from onsemi's SuperFET II series. It features a drain-source voltage (Vds) of 800 V and a continuous drain current (Id) of 1.6 A. The device has a maximum on-resistance (Rds(on)) of 4.3 Ω at Vgs = 10 V. It utilizes charge balance super-junction technology for low switching losses. The component is housed in an IPAK package with through-hole mounting, offering three pins. It operates within a temperature range of -55°C to +150°C junction temperature.
Feature Summary
- SuperFET II super-junction technology for optimized high-voltage performance
- Enhanced switching characteristics via charge balance design
- Robust thermal management capability up to 150°C junction temperature
Applications
- High-voltage power supply circuits
- Industrial motor control systems
- Uninterruptible power supplies (UPS)
- Resonant converter topologies
Procurement Notes
Verify the specific suffix and revision level against the official datasheet to ensure compatibility with your design requirements. Confirm RoHS compliance status as per the latest manufacturer documentation. Check for obsolescence notices, as this part may be subject to lifecycle changes. Ensure sourcing channels provide authentic components with traceable manufacturing records to prevent counterfeits.
Selection Notes
Select this component when a high-voltage, low-current solution is required in a through-hole package. Compare Rds(on) and gate charge specifications against alternative SuperFET II variants like FCPF4300N80Z for similar electrical performance but different packaging. Consider thermal resistance values for heatsinking requirements in your application layout.
Part Context
This device belongs to onsemi's SuperFET II family, which employs super-junction technology to reduce conduction and switching losses. It is designed for high-efficiency power conversion applications. The IPAK package provides mechanical stability for through-hole PCB assembly, distinguishing it from surface-mount equivalents in the same electrical class.
Replacement Considerations
FCPF4300N80Z offers identical electrical specifications in a TO-220F package. Verify pinout compatibility and thermal pad differences before substitution.
