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Product Detailed Parameters
- Description：MOSFET N-CH 600V 4.5A IPAK
- Series：SuperFET® II
- Mfr：onsemi
- Package：Bulk,Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：4.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：900mOhm @ 2.3A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：17 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：710 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：52W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：IPAK
- Package / Case：TO-251-3 Stub Leads, IPAK
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Overview
The FCU900N60Z is an N-Channel SuperFET II MOSFET manufactured by onsemi. It features a 600V drain-source voltage rating and a continuous drain current of 4.5A at case temperature. The device exhibits a maximum on-resistance of 900 milliohms at 10V gate drive. Key electrical parameters include a gate charge of 17nC, input capacitance of 710pF, and power dissipation of 52W. It operates within a junction temperature range of -55°C to 150°C and is housed in an IPAK (TO-251-3) through-hole package.
Feature Summary
- Integrated SuperFET II technology for optimized switching performance
- High voltage capability with 600V breakdown rating
- Low on-resistance design for efficient power conduction
- Robust thermal management suitable for high-temperature operation
Applications
- High-voltage power supply circuits
- DC-DC converter topologies
- Motor control applications requiring moderate current handling
Procurement Notes
Verify the specific ordering suffix and packaging configuration against the official datasheet before procurement. Confirm that the component meets required RoHS compliance standards for your target market. Ensure thermal interface materials are compatible with the IPAK package type. Check for any recent product change notices regarding manufacturing location or material composition updates.
Selection Notes
Select this component when a 600V N-Channel MOSFET with low gate charge is required for high-frequency switching applications. The IPAK package offers a balance between thermal performance and board space efficiency compared to larger through-hole options. Consider the 900mΩ on-resistance trade-off against cost and availability constraints in the design phase.
Part Context
This part belongs to the SuperFET II family from onsemi, designed for high-voltage power management. It utilizes advanced trench gate technology to reduce switching losses. The IPAK package provides reliable through-hole mounting for industrial and consumer electronics. This series is engineered to replace older discrete solutions with integrated diode capabilities.
Replacement Considerations
Consult official cross-reference lists for verified substitutes. Ensure replacement parts match the 600V rating, TO-251-3 footprint, and thermal characteristics. Verify gate threshold voltage compatibility to maintain circuit stability.
