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The FD1000R17IE4DB2BOSA1 is a single IGBT module with an integrated freewheeling diode, housed in a PrimePACK™3 package. It features a collector-emitter voltage (VCES) of 1700 V and a continuous DC collector current (IC nom) of 1000 A at TC = 100°C. The repetitive peak collector current (ICRM) reaches 2000 A for 1 ms pulses. At Tvj = 25°C, the collector-emitter saturation voltage (VCEsat) is typically 2.00 V. The module includes an NTC thermistor with a rated resistance of 5.00 kΩ at 25°C. Total power dissipation is 6.25 kW at TC = 25°C, with a junction-to-case thermal resistance of 24.0 K/kW per IGBT.
Verify component authenticity by cross-referencing the barcode and DMX codes on the module label against official Infineon records. Confirm that the serial number and production datecode match the specific batch documentation provided by the authorized distributor. Ensure the isolation test voltage rating meets the safety requirements of the target system before finalizing procurement.
Select this module when a single switch configuration with a complementary diode is required for high-current chopper or inverter stages. The PrimePACK™3 housing facilitates efficient cooling via a copper base plate. Verify that the gate drive circuit can accommodate the internal gate resistor and input capacitance values to ensure stable switching performance within the specified thermal limits.
This component belongs to the TRENCHSTOP IGBT4 - E4 series from Infineon Technologies. It utilizes silicon technology and is packaged in the industrial-grade PrimePACK™3 format. The module is designed for heavy-duty industrial power conversion environments requiring high reliability and robust thermal cycling capability.
Publicly confirmed substitute part numbers are not available in the verified source material. Consult official Infineon replacement guides for compatible modules within the same voltage and current ratings.