SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The FD1000R33HL3KBPSA1 is a high-power IGBT module from Infineon Technologies, belonging to the Trenchstop IGBT3 - L3 series. It features a dual configuration housed in an IHVB130 package with SMD/SMT mounting style. The device utilizes Silicon technology and supports a collector-emitter maximum voltage (VCEO) of 3.3 kV. At 25°C, it provides a continuous collector current of 1 kA. The module operates within a temperature range of -50°C to +150°C, with a maximum gate-emitter voltage of 20 V.
Verify component authenticity through authorized channels due to the presence of alias part numbers such as SP001181818. Confirm RoHS compliance status and export documentation requirements prior to ordering, as restrictions may apply. Check for end-of-life or not recommended for new design (NRND) status updates directly from the manufacturer before finalizing procurement plans.
Select this module for applications requiring high current handling at medium voltage levels. Ensure the cooling system can manage the thermal dissipation associated with 1 kA continuous operation. Verify that the PCB layout supports the IHVB130 surface mount footprint and that the drive circuitry accommodates the 20 V gate-emitter limit.
This component is part of Infineon's extensive portfolio of high-power discrete and power modules. It shares technical lineage with the FZ1000R33HL3 series, utilizing similar Trenchstop IGBT3 architecture. The specific suffix indicates packaging and tape/reel or tray variations managed under Infineon's standard product coding system.
The FZ1000R33HL3BPSA1 is listed as an alias part number. Direct substitution requires verifying pinout compatibility and thermal interface specifications. Alternative models within the same voltage and current rating should be evaluated for switching speed and saturation voltage differences.