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Product Detailed Parameters
- Description：IGBT MODULE 1700V 1200A
- Series：IHM-B
- Mfr：Infineon Technologies
- Package：Tray
- IGBT Type：-
- Configuration：Single Chopper
- Vce(on) (Max) @ Vge, Ic：2.25V @ 15V, 1.2kA
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：AG-IHVB130-3
- Voltage - Collector Emitter Breakdown (Max)：1700 V
- Current - Collector (Ic) (Max)：1200 A
- Power - Max：6500 W
- Current - Collector Cutoff (Max)：5 mA
- Input Capacitance (Cies) @ Vce：97.5 nF @ 25 V
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Overview
The FD1200R17HP4-K_B2 is an IGBT module with a chopper configuration, rated at VCES = 1700V and IC nom = 1200A. It features an AlSiC base plate for enhanced thermal cycling capability and operates within a junction temperature range of -40°C to 150°C. The module includes an IGBT brake-chopper and two diodes (brake-chopper and reverse). Key electrical parameters include a typical VCEsat of 2.25V at Tvj=125°C and IF=1200A, and a forward voltage VF of 2.10V for the brake-chopper diode under the same conditions. Total power dissipation is 6.5 kW at TC=25°C.
Feature Summary
- AlSiC base plate construction for increased thermal cycling capability
- Extended operating temperature range up to 150°C
- High insulation strength with 4 kV AC isolation
- Low saturation voltage for improved efficiency
Applications
- Chopper applications
- High-power converters
- Traction drives
- Wind turbines
Procurement Notes
Verify the exact ordering suffix against official Infineon documentation to ensure correct component specifications. Confirm that the requested part matches the specific technical requirements of your design, as variations in suffixes can indicate differences in packaging or internal configurations. Always refer to the latest datasheet for accurate procurement details.
Selection Notes
Select this module for high-power applications requiring robust thermal performance and high current handling. Consider the AlSiC base plate for environments with significant thermal cycling. Ensure the gate drive circuitry supports the specified VGE limits and internal gate resistance values for optimal switching performance.
Part Context
This component belongs to Infineon's IHM-B module series, designed for high-power industrial applications. It utilizes IGBT4 technology, offering a balance of low conduction losses and high short-circuit capability. The module is suitable for demanding environments where reliability and thermal stability are critical.
Replacement Considerations
Public confirmed substitute part numbers: None available in verified sources.
FAQ
What is the maximum repetitive peak collector current?
The maximum repetitive peak collector current (ICRM) is 2400 A for a pulse duration of 1 ms.
What is the isolation test voltage of the module?
The isolation test voltage (VISOL) is 4.0 kV RMS for 1 minute at 50 Hz.
What material is used for the module base plate?
The module base plate is made of AlSiC (Aluminum Silicon Carbide) to enhance thermal cycling capability.
