FD1200R17KE3KNOSA1

$807.18

Description：IGBT MOD 1700V 1600A 5950W
Series：EconoPACK™ 4

SKU:1c592dbb1e58 Category: IGBT Modules Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT MOD 1700V 1600A 5950W
Series：EconoPACK™ 4
Mfr：Infineon Technologies
Package：Tray
IGBT Type：-
Configuration：Dual Brake Chopper
Vce(on) (Max) @ Vge, Ic：2.45V @ 15V, 1200A
Input：Standard
NTC Thermistor：No
Operating Temperature：-40°C ~ 125°C
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：Module
Voltage - Collector Emitter Breakdown (Max)：1700 V
Current - Collector (Ic) (Max)：1600 A
Power - Max：5950 W
Current - Collector Cutoff (Max)：5 mA
Input Capacitance (Cies) @ Vce：110 nF @ 25 V

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FD1200R17KE3KNOSA1

Overview

The FD1200R17KE3-K is a chopper IGBT module from Infineon's IGBT3-E3 series, housed in the IHM package. It features a collector-emitter voltage of 1700 V and a continuous DC collector current of 1200 A at 80°C case temperature. The saturation voltage is typically 2.0 V at 25°C junction temperature. Total power dissipation reaches 5.95 kW at 25°C. The module includes an integrated brake-chopper diode with a forward voltage of 1.8 V. Operating temperatures range from -40°C to +125°C.

Feature Summary

Integrated brake-chopper topology for regenerative braking applications
High short-circuit withstand capability up to 4800 A
Copper baseplate construction for efficient thermal management

Applications

Industrial traction drives
Railway vehicle propulsion systems
Medium-voltage motor drives

Procurement Notes

Verify component authenticity through authorized channels. Confirm datasheet revision matches the specific lot code on the module casing. Ensure storage conditions remain within the specified temperature limits to maintain material integrity before installation.

Selection Notes

Evaluate thermal resistance requirements against the application's cooling strategy. Verify gate drive voltage compatibility with the specified ±15 V operating range. Check mechanical mounting torque specifications to ensure secure attachment without damaging the module structure.

Part Context

This component belongs to the IGBT3-E3 product family designed for industrial and traction environments. It utilizes silicon technology optimized for high-power switching. The module integrates both NPT IGBT chips and fast recovery diodes into a single robust housing.