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The FD300R12KS4B5HOSA1 is a single-switch IGBT module from the 62mm C-series, utilizing fast IGBT2 technology for high-frequency switching. It features a collector-emitter voltage of 1200 V and a continuous DC collector current of 300 A at 60°C case temperature. The module integrates a serial diode with a forward current rating of 300 A. Key electrical parameters include a maximum total power dissipation of 1950 W, a junction-to-case thermal resistance of 0.064 K/W per IGBT, and an internal gate resistance of 1.0 Ω. Operating temperatures range from -40°C to 125°C.
Verify component authenticity through authorized Infineon channels or certified distributors. Confirm RoHS compliance status and check for the NRND (Not Recommended for New Designs) lifecycle designation before procurement. Ensure supply chain documentation matches the specific B5HOSA1 suffix requirements for your manufacturing process.
Evaluate thermal management requirements against the specified junction-to-case resistance values. Verify that the application's switching frequency aligns with the fast IGBT2 characteristics. Ensure gate drive voltages remain within the ±20 V peak limit and confirm mechanical mounting torque specifications for the M6 screws to maintain reliable thermal contact.
This component belongs to Infineon's 62mm C-series modules, which are engineered for robust performance in industrial environments. The series utilizes silicon-based IGBT2 technology to balance low conduction losses with efficient switching speeds. These modules are standard components in medium-power industrial electronics requiring reliable hard-switching capabilities.
FD300R12KS4_B5
The module supports a short-circuit current of 2000 A for pulse durations up to 10 µs at a junction temperature of 125°C.
The module provides an isolation test voltage of 2.5 kV RMS at 50 Hz for one minute.
The forward voltage decreases as temperature increases, ranging from a typical 2.00 V at 25°C to 1.70 V at 125°C when conducting 300 A.