SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The FD450R12KE4PHOSA1 is a single-chip IGBT module from the Chopper IGBT4 - E4 series, utilizing Trench/Fieldstop technology. It features an integrated emitter-controlled HE diode and pre-applied thermal interface material within a 62 mm C-Series housing. The collector-emitter voltage (VCES) is rated at 1200 V, with a continuous DC collector current (ICDC) of 450 A at TH = 70°C. The repetitive peak collector current (ICRM) reaches 900 A for 1 ms pulses. At Tvj = 25°C, the collector-emitter saturation voltage (VCEsat) is typically 1.75 V. The module operates within a junction temperature range of -40°C to +150°C.
Verify the specific ordering suffix PHOSA1 against official Infineon documentation to confirm exact packaging and marking details. Confirm that the pre-applied thermal interface material requirements are met during storage and transport according to application notes. Ensure mounting torque specifications for M6 screws align with valid application guidelines before installation.
Select this component for designs requiring robust short-circuit withstand capability and low switching losses. The positive temperature coefficient of VCEsat facilitates parallel operation without complex current balancing. Verify that the 62 mm C-Series footprint matches the mechanical constraints of the target heatsink and enclosure layout.
This module belongs to the Infineon Chopper IGBT4 - E4 product family. It utilizes silicon technology within a standard 62 mm housing. The part number alias includes FD450R12KE4P. It is designed for industrial power electronics applications requiring high reliability and efficient thermal management.
Public confirmed substitute part numbers are not available in the provided datasheet or source material. Consult official Infineon cross-reference documentation for potential replacements.