FD600R17KF6CB2NOSA1

$785.21

Description：FD600R17KF6C - IGBT MODULE
Series：*

SKU:896553cd36f5 Category: IGBT Modules Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：FD600R17KF6C - IGBT MODULE
Series：*
Mfr：Infineon Technologies
Package：Bulk
IGBT Type：-
Configuration：-
Vce(on) (Max) @ Vge, Ic：-
Input：-
NTC Thermistor：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Voltage - Collector Emitter Breakdown (Max)：-
Current - Collector (Ic) (Max)：-
Power - Max：-
Current - Collector Cutoff (Max)：-
Input Capacitance (Cies) @ Vce：-

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FD600R17KF6CB2NOSA1

Overview

The FD600R17KF6CB2NOSA1 is a high-power Insulated Gate Bipolar Transistor (IGBT) module manufactured by Infineon Technologies. It belongs to the IHM-A series and utilizes Trenchstop technology for optimized switching performance. The device features a dual configuration with an integrated anti-parallel diode, rated for a maximum collector-emitter voltage of 1700 V and a nominal collector current of 600 A. Designed for robust industrial applications, it operates within a junction temperature range of -40°C to +150°C and is housed in a press-fit compatible package.

Feature Summary

Dual IGBT configuration with integrated fast recovery anti-parallel diode
Trenchstop technology for low conduction and switching losses
Press-fit termination design for reliable thermal cycling performance
High short-circuit withstand capability for system protection

Applications

Medium frequency induction heating systems
Industrial motor drives and inverters
Uninterruptible power supplies (UPS)
Static frequency converters

Procurement Notes

Verify the specific suffix 'NOSA1' against the manufacturer's official documentation to confirm RoHS compliance status and material content declarations. Ensure that the ordering code matches the exact technical specifications required for the target application, as minor suffix variations may indicate differences in packaging or environmental certifications.

Selection Notes

Select this component when a 1700 V rating and 600 A current capacity are required in a dual topology. Consider the thermal resistance characteristics and the necessity for press-fit mounting during PCB or baseplate integration. Evaluate the switching speed requirements against the Trenchstop technology capabilities to ensure compatibility with the system's electromagnetic interference constraints.

Part Context

This module is part of Infineon's IHM-A series, which represents a generation of high-performance power modules designed for demanding industrial environments. The series emphasizes reliability and efficiency through advanced semiconductor structures. The FD prefix typically denotes a dual configuration with an integrated diode, distinguishing it from single-switch variants within the same voltage and current class.