FD800R45KL3KB5NPSA1

Overview

The FD800R45KL3-K_B5 is a highly insulated IGBT module utilizing Trench/Fieldstop technology. It features a collector-emitter voltage of 4500 V and a continuous DC collector current of 800 A at 95 °C case temperature, with a repetitive peak current capability of 1600 A. The module integrates an emitter-controlled diode for brake-chopper applications. Key electrical parameters include a typical saturation voltage of 2.85 V at 25 °C and a forward voltage of 3.10 V for the diode. Thermal resistance from junction to case is 11.1 K/kW for the IGBT and 25.5 K/kW for the diode. The package utilizes an AlSiC base plate and provides enhanced insulation with a test voltage of 10.4 kV AC.

Feature Summary

• Highly insulated design with isolated base plate and high creepage distances
• Trench/Fieldstop IGBT3 technology providing positive temperature coefficient for saturation voltage
• AlSiC base plate construction engineered for increased thermal cycling capability
• Robust short-circuit handling and high dynamic robustness characteristics

Applications

• Traction drives
• Motor drives
• Medium-voltage converters
• Chopper applications
• High-power converters

Procurement Notes

Verify component authenticity by cross-referencing the unique serial number and material number printed on the module label against official Infineon records. Confirm that the specific ordering suffix matches the required technical specifications, as variations may exist within the product family. Ensure compliance with industrial qualification standards such as IEC 60747 and IEC 60068 prior to integration into final equipment designs.

Selection Notes

Select this module for high-voltage applications requiring robust short-circuit tolerance and high thermal stability. The AlSiC base plate makes it suitable for environments demanding high thermal cycling endurance. Verify that the system operates within the specified maximum junction temperature range of -50 °C to 125 °C. Ensure gate drive circuits are configured to respect the ±20 V peak gate-emitter voltage limit and appropriate external resistors are used to manage switching speeds.

Part Context

This component belongs to the Infineon IHV B series of highly insulated modules designed for medium-voltage power conversion. It represents the Trench/Fieldstop IGBT3 generation, offering improved performance over previous technologies. The module is specifically engineered for industrial traction and high-power converter applications where reliability under extreme electrical and thermal stress is critical.

Replacement Considerations

Direct replacements must match the 4500 V rating, 800 A current capacity, and IHV B package dimensions. Verify compatibility of thermal interface materials and mounting torque specifications (M6 screws: 4.25–5.75 Nm). Cross-reference datasheets for equivalent switching losses and thermal resistance values to ensure system performance remains unchanged.