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Product Detailed Parameters
- Description：MOSFET N-CH 500V 16.5A TO3PN
- Series：UniFET™
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：500 V
- Current - Continuous Drain (Id) @ 25°C：16.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：380mOhm @ 8.3A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：45 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：1945 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：205W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-3PN
- Package / Case：TO-3P-3, SC-65-3
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Overview
The FDA16N50 is a 500V N-Channel MOSFET from the UniFET series, manufactured by Fairchild Semiconductor and now part of onsemi. It features a typical drain current of 16.5A at 25°C case temperature and a maximum on-resistance of 0.38Ω at VGS=10V. Key electrical parameters include a total gate charge of 32nC typ, reverse transfer capacitance of 20pF typ, and single pulsed avalanche energy of 780mJ. The device utilizes planar stripe DMOS technology for optimized switching performance.
Feature Summary
- Optimized for discontinuous current mode power factor correction applications
- Enhanced dv/dt capability for improved commutation performance
- 100% avalanche tested for robustness in high-energy pulse environments
Applications
- High efficient switched mode power supplies
- Active power factor correction circuits
- Discontinuous current mode power factor correction
Procurement Notes
Verify the manufacturer origin as Fairchild Semiconductor or onsemi, noting that Fairchild was acquired by onsemi. Confirm the package type is TO-3PN and check the revision status (Rev. B) against current inventory. Ensure the specific ordering suffix matches the required variant, such as F109, if applicable to the supply chain requirements.
Selection Notes
Select this component for designs requiring 500V blocking voltage with moderate continuous current handling up to 16.5A. Consider the thermal resistance characteristics and the need for adequate heatsinking given the 205W dissipation rating at 25°C case temperature. Evaluate the gate charge requirements against the driver capabilities to ensure optimal switching speeds.
Part Context
This device belongs to the UniFET family of power MOSFETs produced using proprietary planar stripe DMOS technology. The FDA series is specifically engineered to minimize on-state resistance while providing superior switching performance. It represents a legacy product line originally developed by Fairchild Semiconductor before its acquisition by onsemi.
Replacement Considerations
Check for direct equivalents within the FDA series or other 500V N-Channel MOSFETs with similar RDS(on) and Qg specifications. Verify pinout compatibility for TO-3PN packages when substituting. Review updated datasheets from onsemi for any design changes or obsolescence notices.
